Selective formation of thickness-controlled fullerene disks by vapor-solid process
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- Selective formation of thickness-controlled fullerene disks by vapor-solid process
- Ahn, Seong Joon; Yang, Jieun; Lim, Kwan Woo; Shin, Hyeon Suk
- A1. Nanostructure; A2. Growth from vapor; A3. Chemical vapor deposition processes; B1. Fullerenes
- Issue Date
- ELSEVIER SCIENCE BV
- JOURNAL OF CRYSTAL GROWTH, v.363, no., pp.141 - 144
- Thin C-60 disks were selectively prepared without any solvent using a vapor-solid process. A tube furnace with three separate heating zones was used. Controlling the substrate temperature and the vapor temperature made the selective formation of the thin C-60 disks possible. The temperature of the first and second zones for evaporation of C-60 was fixed at 650 degrees C, the temperature of the third zone at 500 degrees C, and the temperature of the substrate between 150 and 300 degrees C by water circulation through the sample stage. The thickness of the thin C-60 disks decreased as the substrate temperature increased in the range of 150-300 degrees C. This occurred because the growth rate of a crystal increases as the difference between the evaporation temperature and the substrate temperature (crystallization temperature) of the fullerene increases.
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