Structural variations of Si 1-xC x and their light absorption controllability
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- Structural variations of Si 1-xC x and their light absorption controllability
- Moon, Jihyun; Baik, Seung Jae; O, Byungsung; Lee, Jeong Chul
- Light absorption; Nanocrystalline Si; Silicon carbide; Solar cell; Superlattice
- Issue Date
- NANOSCALE RESEARCH LETTERS, v.7, no., pp.503 -
- The emergence of third-generation photovoltaics based on Si relies on tunable bandgap materials with embedded nanocrystalline Si. One of the most promising approaches is based on the mixed-phase Si1 -aEuro parts per thousand x C (x) . We have investigated the light absorption controllability of nanocrystalline Si-embedded Si1 -aEuro parts per thousand x C (x) produced by thermal annealing of the Si-rich Si1 -aEuro parts per thousand x C (x) and composition-modulated superlattice structure. In addition, stoichiometric SiC was also investigated to comparatively analyze the characteristic differences. As a result, it was found that stoichiometric changes of the matrix material and incorporation of oxygen play key roles in light absorption controllability. Based on the results of this work and literature, a design strategy of nanocrystalline Si-embedded absorber materials for third-generation photovoltaics is discussed.
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