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- Jeong, Changwook
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Highly reliable ring-type contact for high-density phase change memory
- Author(s)
- Jeong, Changwook, Ahn, Su-Jin, Hwang, Young-Nam, Song, Yoon-Jong, Oh, Jac-Hee, Lee, Su-Youn, Lee, Se-Ho, Ryoo, Kyung-Chang, Park, Jong-Hyun, Park, Jae-Hyun, Shin, Jac-Min, Yeung, Fai, Jeong, Won-Cheol, Kim, Jeong-In, Koh, Gwan-Hyeob, Jeong, Gi-Tae, Jeong, Hong-Sik, Kim, Kinam
- Issued Date
- 2006-04
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.45, no.4B, pp.3233 - 3237
- Abstract
- An advanced bottom electrode contact (BEC) was successfully developed for reliable high-density 256Mb phase-change random access memory (PRAM) using a ring-type contact scheme. This advanced ring-type BEC was prepared by depositing very thin TiN films inside a contact hole, after which core dielectrics were uniformly filled into the TiN-deposited contact hole. Using this novel contact scheme, it was possible to reduce reset current while maintaining a low set resistance and a uniform cell distribution. Thus, it has been clearly demonstrated that the use of the ring-type contact technology is very feasible for high-density PRAM beyond 256 Mb.
- Publisher
- IOP PUBLISHING LTD
- ISSN
- 0021-4922
- Keyword (Author)
- low reset current, reliability, 256 Mb PRAM, ring-shape contact
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