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- Jeong, Changwook
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A new reference signal generation method for MRAM using a 90-degree rotated MTJ
- Author(s)
- Jeong, WC, Kim, HJ, Park, JH, Jeong, Changwook, Lee, EY, Oh, JH, Jeong, GT, Koh, GH, Koo, HC, Lee, SH, Lee, SY, Shin, JM, Jeong, Hongsik, Kim, K
- Issued Date
- 2004-07
- Citation
- IEEE TRANSACTIONS ON MAGNETICS, v.40, no.4, pp.2628 - 2630
- Abstract
- A new reference signal generation method for high-density MRAM is reported. 0.4 x 0.8 mum(2) magnetic tunnel junction (MTJ) elements were successfully integrated with 0.24-mum CMOS technology. By using a 90-degree rotated MTJ as a new reference signal generator, the reference resistance could be always located in the exact midpoint between high-resistance state R-H and low-resistance state R-L regardless of applied voltage. When tested in 8 x 8 MTJ arrays, it is found to show good fidelity to our expectations. So it is supposed that this new method is more favorable for high-density MRAM.
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- ISSN
- 0018-9464
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