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- Jeong, Changwook
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 2630 | - |
| dc.citation.number | 4 | - |
| dc.citation.startPage | 2628 | - |
| dc.citation.title | IEEE TRANSACTIONS ON MAGNETICS | - |
| dc.citation.volume | 40 | - |
| dc.contributor.author | Jeong, WC | - |
| dc.contributor.author | Kim, HJ | - |
| dc.contributor.author | Park, JH | - |
| dc.contributor.author | Jeong, Changwook | - |
| dc.contributor.author | Lee, EY | - |
| dc.contributor.author | Oh, JH | - |
| dc.contributor.author | Jeong, GT | - |
| dc.contributor.author | Koh, GH | - |
| dc.contributor.author | Koo, HC | - |
| dc.contributor.author | Lee, SH | - |
| dc.contributor.author | Lee, SY | - |
| dc.contributor.author | Shin, JM | - |
| dc.contributor.author | Jeong, Hongsik | - |
| dc.contributor.author | Kim, K | - |
| dc.date.accessioned | 2023-12-22T10:45:05Z | - |
| dc.date.available | 2023-12-22T10:45:05Z | - |
| dc.date.created | 2019-07-11 | - |
| dc.date.issued | 2004-07 | - |
| dc.description.abstract | A new reference signal generation method for high-density MRAM is reported. 0.4 x 0.8 mum(2) magnetic tunnel junction (MTJ) elements were successfully integrated with 0.24-mum CMOS technology. By using a 90-degree rotated MTJ as a new reference signal generator, the reference resistance could be always located in the exact midpoint between high-resistance state R-H and low-resistance state R-L regardless of applied voltage. When tested in 8 x 8 MTJ arrays, it is found to show good fidelity to our expectations. So it is supposed that this new method is more favorable for high-density MRAM. | - |
| dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON MAGNETICS, v.40, no.4, pp.2628 - 2630 | - |
| dc.identifier.doi | 10.1109/TMAG.2004.829328 | - |
| dc.identifier.issn | 0018-9464 | - |
| dc.identifier.scopusid | 2-s2.0-4444334716 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/27115 | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/1325590 | - |
| dc.identifier.wosid | 000223446700208 | - |
| dc.language | 영어 | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | A new reference signal generation method for MRAM using a 90-degree rotated MTJ | - |
| dc.type | Article | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Physics, Applied | - |
| dc.relation.journalResearchArea | Engineering; Physics | - |
| dc.type.docType | Article; Proceedings Paper | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordAuthor | magnetic tunnel junction (MTJ) | - |
| dc.subject.keywordAuthor | magnetic random access memory (MRAM) | - |
| dc.subject.keywordAuthor | reference cell | - |
| dc.subject.keywordAuthor | tunneling magnetoresistance (TMR) | - |
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