Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor
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- Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor
- Lee, Youngbin; Lee, Jinhwan; Bark, Hunyoung; Oh, Il-Kwon; Ryu, Gyeong Hee; Lee, Zonghoon; Kim, Hyungjun; Cho, Jeong Ho; Ahn, Jong-Hyun; Lee, Changgu
- MOS2 ATOMIC LAYERS; LARGE-AREA; THIN-LAYERS; GRAPHENE; MONOLAYER; OPTOELECTRONICS; SULFURIZATION; ELECTRONICS; TRANSISTORS; GROWTH
- Issue Date
- ROYAL SOC CHEMISTRY
- NANOSCALE, v.6, no.5, pp.2821 - 2826
- We describe a method for synthesizing large-area and uniform molybdenum disulfide films, with control over the layer number, on insulating substrates using a gas phase sulfuric precursor (H2S) and a molybdenum metal source. The metal layer thickness was varied to effectively control the number of layers (2 to 12) present in the synthesized film. The films were grown on wafer-scale Si/SiO2 or quartz substrates and displayed excellent uniformity and a high crystallinity over the entire area. Thin film transistors were prepared using these materials, and the performances of the devices were tested. The devices displayed an on/off current ratio of 10(5), a mobility of 0.12 cm(2) V (1) s (1) (mean mobility value of 0.07 cm(2) V-1 s(-1)), and reliable operation.
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