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Author

Lee, Zonghoon
Atomic-Scale Electron Microscopy (ASEM) Lab
Research Interests
  • Advanced Transmission Electron Microscopy (TEM/STEM), in Situ TEM, graphene, 2D materials, low-dimensional crystals, nanostructured materials

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Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor

Cited 9 times inthomson ciCited 3 times inthomson ci
Title
Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor
Author
Lee, YoungbinLee, JinhwanBark, HunyoungOh, Il-KwonRyu, Gyeong HeeLee, ZonghoonKim, HyungjunCho, Jeong HoAhn, Jong-HyunLee, Changgu
Keywords
MOS2 ATOMIC LAYERS; LARGE-AREA; THIN-LAYERS; GRAPHENE; MONOLAYER; OPTOELECTRONICS; SULFURIZATION; ELECTRONICS; TRANSISTORS; GROWTH
Issue Date
201403
Publisher
ROYAL SOC CHEMISTRY
Citation
NANOSCALE, v.6, no.5, pp.2821 - 2826
Abstract
We describe a method for synthesizing large-area and uniform molybdenum disulfide films, with control over the layer number, on insulating substrates using a gas phase sulfuric precursor (H2S) and a molybdenum metal source. The metal layer thickness was varied to effectively control the number of layers (2 to 12) present in the synthesized film. The films were grown on wafer-scale Si/SiO2 or quartz substrates and displayed excellent uniformity and a high crystallinity over the entire area. Thin film transistors were prepared using these materials, and the performances of the devices were tested. The devices displayed an on/off current ratio of 10(5), a mobility of 0.12 cm(2) V (1) s (1) (mean mobility value of 0.07 cm(2) V-1 s(-1)), and reliable operation.
URI
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DOI
http://dx.doi.org/10.1039/c3nr05993f
ISSN
2040-3364
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