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Kim, Youngmin
Nano-scale(system) Design & Automation Lab
Research Interests
  • Design & Technology Co-Optimization (DTCO)

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Diffusion-rounded CMOS for improving both I-on and I-off characteristics

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Title
Diffusion-rounded CMOS for improving both I-on and I-off characteristics
Author
Ryu, MyunghwanNguyen, Hung VietKim, Youngmin
Keywords
CMOS; Edge effect; Electrical behaviors; Off-current; On-currents; Optimized devices; Variation
Issue Date
201111
Publisher
IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
Citation
IEICE ELECTRONICS EXPRESS, v.8, no.21, pp.1783 - 1788
Abstract
This paper presents a simple and optimized device layout developed by using diffusion rounding effect for better electrical behavior of transistors. TCAD analysis shows that diffusion rounding at the transistor source side can provide increased I-on with decreased I-off because of the edge effect. The proposed diffusion-rounded CMOS shows as much as 10% improvement in the on-current (driving) and the off-current (leakage) is saved up to 10%. The inverter layout shows that proposed method requires less than a 4% cell area increase for the same driving strength of original cells.
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DOI
http://dx.doi.org/10.1587/elex.8.1783
ISSN
1349-2543
Appears in Collections:
ECE_Journal Papers
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