Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission
Cited 0 times inCited 0 times in
- Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission
- Ko, Suk-Min; Kwack, Ho-Sang; Park, Chunghyun; Yoo, Yang-Seok; Kwon, Soon-Yong; Kim, Hee Jin; Yoon, Euijoon; Dang, Le Si; Cho, Yong-Hoon
- Issue Date
- AMER INST PHYSICS
- APPLIED PHYSICS LETTERS, v.103, no.22, pp.222104 -
- Here, we report on the optical and structural characteristics of violet-light-emitting, ultra-thin, high-Indium-content (UTHI) InGaN/GaN multiple quantum wells (MQWs), and of conventional low-In-content MQWs, which both emit at similar emission energies though having different well thicknesses and In compositions. The spatial inhomogeneity of In content, and the potential fluctuation in high-efficiency UTHI MQWs were compared to those in the conventional low-In-content MQWs. We conclude that the UTHI InGaN MQWs are a promising structure for achieving better quantum efficiency in the visible and near-ultraviolet spectral range, owing to their strong carrier localization and reduced quantum-confined Stark effect.
- ; Go to Link
Appears in Collections:
- MSE_Journal Papers
- Files in This Item:
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.