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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission

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Title
Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission
Author
Ko, Suk-MinKwack, Ho-SangPark, ChunghyunYoo, Yang-SeokKwon, Soon-YongKim, Hee JinYoon, EuijoonDang, Le SiCho, Yong-Hoon
Keywords
EMITTING-DIODES
Issue Date
201311
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.103, no.22, pp.222104 -
Abstract
Here, we report on the optical and structural characteristics of violet-light-emitting, ultra-thin, high-Indium-content (UTHI) InGaN/GaN multiple quantum wells (MQWs), and of conventional low-In-content MQWs, which both emit at similar emission energies though having different well thicknesses and In compositions. The spatial inhomogeneity of In content, and the potential fluctuation in high-efficiency UTHI MQWs were compared to those in the conventional low-In-content MQWs. We conclude that the UTHI InGaN MQWs are a promising structure for achieving better quantum efficiency in the visible and near-ultraviolet spectral range, owing to their strong carrier localization and reduced quantum-confined Stark effect.
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DOI
http://dx.doi.org/10.1063/1.4833917
ISSN
0003-6951
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MSE_Journal Papers
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