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Park, Youngsin
Center for Superfunctional Materials
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Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods

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Title
Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods
Author
Park, YoungsinChan, Christopher C.S.Taylor, Robert A.Kim, NammeeJo, YongcheolLee, Seung W.Yang, WoochulIm, Hyunsik
Keywords
InGaN/GaN quantum disk;  Photoluminescence;  Quantum confined Stark Effect
Issue Date
201804
Publisher
ELSEVIER SCIENCE BV
Citation
OPTICAL MATERIALS, v.78, no., pp.365 - 369
Abstract
Structural and optical properties of InxGa1-xN/GaN multi quantum disks (QDisks) grown on GaN nanorods by molecular beam epitaxy have been investigated by transmission electron microscopy and micro-photoluminescence (PL) spectroscopy. Two types of InGaN QDisks were grown: a pseudo-3D confined InGaN pillar-type QDisks embedded in GaN nanorods; and QDisks in flanged cone type GaN nanorods. The PL emission peak and excitation dependent PL behavior of the pillar-type Qdisks differ greatly from those of the flanged cone type QDisks. Time resolved PL was carried out to probe the differences in charge carrier dynamics. The results suggest that by constraining the formation of InGaN QDisks within the centre of the nanorod, carriers are restricted from migrating to the surface, decreasing the surface recombination at high carrier densities.
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DOI
http://dx.doi.org/10.1016/j.optmat.2018.02.052
ISSN
0925-3467
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