There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 369 | - |
dc.citation.startPage | 365 | - |
dc.citation.title | OPTICAL MATERIALS | - |
dc.citation.volume | 78 | - |
dc.contributor.author | Park, Youngsin | - |
dc.contributor.author | Chan, Christopher C.S. | - |
dc.contributor.author | Taylor, Robert A. | - |
dc.contributor.author | Kim, Nammee | - |
dc.contributor.author | Jo, Yongcheol | - |
dc.contributor.author | Lee, Seung W. | - |
dc.contributor.author | Yang, Woochul | - |
dc.contributor.author | Im, Hyunsik | - |
dc.date.accessioned | 2023-12-21T21:06:23Z | - |
dc.date.available | 2023-12-21T21:06:23Z | - |
dc.date.created | 2018-03-27 | - |
dc.date.issued | 2018-04 | - |
dc.description.abstract | Structural and optical properties of InxGa1-xN/GaN multi quantum disks (QDisks) grown on GaN nanorods by molecular beam epitaxy have been investigated by transmission electron microscopy and micro-photoluminescence (PL) spectroscopy. Two types of InGaN QDisks were grown: a pseudo-3D confined InGaN pillar-type QDisks embedded in GaN nanorods; and QDisks in flanged cone type GaN nanorods. The PL emission peak and excitation dependent PL behavior of the pillar-type Qdisks differ greatly from those of the flanged cone type QDisks. Time resolved PL was carried out to probe the differences in charge carrier dynamics. The results suggest that by constraining the formation of InGaN QDisks within the centre of the nanorod, carriers are restricted from migrating to the surface, decreasing the surface recombination at high carrier densities. | - |
dc.identifier.bibliographicCitation | OPTICAL MATERIALS, v.78, pp.365 - 369 | - |
dc.identifier.doi | 10.1016/j.optmat.2018.02.052 | - |
dc.identifier.issn | 0925-3467 | - |
dc.identifier.scopusid | 2-s2.0-85042658817 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/23891 | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0925346718301162 | - |
dc.identifier.wosid | 000430994200048 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Optics | - |
dc.relation.journalResearchArea | Materials Science; Optics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | InGaN/GaN quantum disk | - |
dc.subject.keywordAuthor | Photoluminescence | - |
dc.subject.keywordAuthor | Quantum confined Stark Effect | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | SINGLE-PHOTON EMISSION | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE DECAY | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | DOTS | - |
dc.subject.keywordPlus | BLUE | - |
dc.subject.keywordPlus | POLARIZATION | - |
dc.subject.keywordPlus | DEPENDENCE | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.