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Ferromagnetic ordering in Mn induced by thermal strain
- Author(s)
- Hwang, Younghun, Choi,Jeongyong, Hong, Soon Cheol, Cho, Sunglae, Han, Suk-Hee, Shin, Kyung-Ho, Jung, Myung-Wha
- Issued Date
- 2009-01
- Citation
- PHYSICAL REVIEW B, v.79, no.4, pp.045309
- Abstract
- We report that the thermal strain due to the thermal-expansion difference between a Mn film and a semiconductor substrate is strong enough to overcome the thermal energy for a paramagnetic (PM) state and also to break antiferromagnetic (AF) magnetic symmetry, inducing ferromagnetic (FM) ordering at high temperatures. A Mn film on GaAs (100) showed FM ordering up to 9000 A with a Curie temperature (T(C)) of over 750 K and a net magnetic moment of 0.33 mu(B)/Mn, instead of AF (Neel temperature, T(N)=95 K) and PM orderings in bulk.
- Publisher
- AMER PHYSICAL SOC
- ISSN
- 2469-9950
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