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dc.citation.number 4 -
dc.citation.startPage 045309 -
dc.citation.title PHYSICAL REVIEW B -
dc.citation.volume 79 -
dc.contributor.author Hwang, Younghun -
dc.contributor.author Choi,Jeongyong -
dc.contributor.author Hong, Soon Cheol -
dc.contributor.author Cho, Sunglae -
dc.contributor.author Han, Suk-Hee -
dc.contributor.author Shin, Kyung-Ho -
dc.contributor.author Jung, Myung-Wha -
dc.date.accessioned 2023-12-22T08:10:36Z -
dc.date.available 2023-12-22T08:10:36Z -
dc.date.created 2017-02-23 -
dc.date.issued 2009-01 -
dc.description.abstract We report that the thermal strain due to the thermal-expansion difference between a Mn film and a semiconductor substrate is strong enough to overcome the thermal energy for a paramagnetic (PM) state and also to break antiferromagnetic (AF) magnetic symmetry, inducing ferromagnetic (FM) ordering at high temperatures. A Mn film on GaAs (100) showed FM ordering up to 9000 A with a Curie temperature (T(C)) of over 750 K and a net magnetic moment of 0.33 mu(B)/Mn, instead of AF (Neel temperature, T(N)=95 K) and PM orderings in bulk. -
dc.identifier.bibliographicCitation PHYSICAL REVIEW B, v.79, no.4, pp.045309 -
dc.identifier.doi 10.1103/PhysRevB.79.045309 -
dc.identifier.issn 2469-9950 -
dc.identifier.scopusid 2-s2.0-59749092049 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/21584 -
dc.identifier.url http://journals.aps.org/prb/abstract/10.1103/PhysRevB.79.045309 -
dc.identifier.wosid 000262978400069 -
dc.language 영어 -
dc.publisher AMER PHYSICAL SOC -
dc.title Ferromagnetic ordering in Mn induced by thermal strain -
dc.type Article -
dc.description.journalRegisteredClass scopus -

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