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김성엽

Kim, Sung Youb
Computational Advanced Nanomechanics Lab.
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Substantial improvements of long-term stability in encapsulation-free WS2 using highly interacting graphene substrate

Author(s)
Kim, Se-YangKwak, JinsungKim, Jung HwaLee, Jae-UngJo, YongsuKim, Sung YoubCheong HyeonsikLee, ZonghoonKwon, Soon-Yong
Issued Date
2017-03
DOI
10.1088/2053-1583/4/1/011007
URI
https://scholarworks.unist.ac.kr/handle/201301/20921
Fulltext
http://iopscience.iop.org/article/10.1088/2053-1583/4/1/011007/meta
Citation
2D MATERIALS, v.4, no.1, pp.011007
Abstract
We report the novel role of graphene substrates in obstructing the aging propagation in both the basal planes and edges of two-dimensitional sheets of transition metal dichalcogenides (TMDs). Even after 300 d in ambient air conditions, the epitaxially grown WS2/graphene samples have a clean, uniform surface without any encapsulation. We show that high crystallinity is an effective factor that determines the excellent air stability of WS2/graphene, and we present impressive experimental evidence of the relation between defects and the aging phenomena. Moreover, we reveal the strong interlayer charge interaction as an additional factor for the enhanced air stability as a result of charge transfer-induced doping. This work not only proposes a simple method to create highly stable TMDs by the selection of a suitable substrate but also paves the way for the realization of practical TMDs-based applications.
Publisher
IOP PUBLISHING LTD
ISSN
2053-1583
Keyword (Author)
transition metal dichalcogenides (TMDs)grapheneair stabilitycrystallinityinterlayer couplingWS2/graphene heterostructure
Keyword
MOS2 TRANSISTORSCHARGE-TRANSFERMONOLAYER WS2GROWTHHETEROSTRUCTURESLAYERS

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