File Download

There are no files associated with this item.

  • Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
Related Researcher

김성엽

Kim, Sung Youb
Computational Advanced Nanomechanics Lab.
Read More

Views & Downloads

Detailed Information

Cited time in webofscience Cited time in scopus
Metadata Downloads

Full metadata record

DC Field Value Language
dc.citation.number 1 -
dc.citation.startPage 011007 -
dc.citation.title 2D MATERIALS -
dc.citation.volume 4 -
dc.contributor.author Kim, Se-Yang -
dc.contributor.author Kwak, Jinsung -
dc.contributor.author Kim, Jung Hwa -
dc.contributor.author Lee, Jae-Ung -
dc.contributor.author Jo, Yongsu -
dc.contributor.author Kim, Sung Youb -
dc.contributor.author Cheong Hyeonsik -
dc.contributor.author Lee, Zonghoon -
dc.contributor.author Kwon, Soon-Yong -
dc.date.accessioned 2023-12-21T22:38:50Z -
dc.date.available 2023-12-21T22:38:50Z -
dc.date.created 2016-12-01 -
dc.date.issued 2017-03 -
dc.description.abstract We report the novel role of graphene substrates in obstructing the aging propagation in both the basal planes and edges of two-dimensitional sheets of transition metal dichalcogenides (TMDs). Even after 300 d in ambient air conditions, the epitaxially grown WS2/graphene samples have a clean, uniform surface without any encapsulation. We show that high crystallinity is an effective factor that determines the excellent air stability of WS2/graphene, and we present impressive experimental evidence of the relation between defects and the aging phenomena. Moreover, we reveal the strong interlayer charge interaction as an additional factor for the enhanced air stability as a result of charge transfer-induced doping. This work not only proposes a simple method to create highly stable TMDs by the selection of a suitable substrate but also paves the way for the realization of practical TMDs-based applications. -
dc.identifier.bibliographicCitation 2D MATERIALS, v.4, no.1, pp.011007 -
dc.identifier.doi 10.1088/2053-1583/4/1/011007 -
dc.identifier.issn 2053-1583 -
dc.identifier.scopusid 2-s2.0-85014469380 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/20921 -
dc.identifier.url http://iopscience.iop.org/article/10.1088/2053-1583/4/1/011007/meta -
dc.identifier.wosid 000390366800001 -
dc.language 영어 -
dc.publisher IOP PUBLISHING LTD -
dc.title Substantial improvements of long-term stability in encapsulation-free WS2 using highly interacting graphene substrate -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Materials Science, Multidisciplinary -
dc.relation.journalResearchArea Materials Science -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor transition metal dichalcogenides (TMDs) -
dc.subject.keywordAuthor graphene -
dc.subject.keywordAuthor air stability -
dc.subject.keywordAuthor crystallinity -
dc.subject.keywordAuthor interlayer coupling -
dc.subject.keywordAuthor WS2/graphene heterostructure -
dc.subject.keywordPlus MOS2 TRANSISTORS -
dc.subject.keywordPlus CHARGE-TRANSFER -
dc.subject.keywordPlus MONOLAYER WS2 -
dc.subject.keywordPlus GROWTH -
dc.subject.keywordPlus HETEROSTRUCTURES -
dc.subject.keywordPlus LAYERS -

qrcode

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.