File Download
There are no files associated with this item.
SFX Link
- Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
- Jin, Hosub
Views & Downloads
Detailed Information
Cited time in 
Cited time in 
Cited time in
Metadata Downloads
Photo-Induced Current Transient Spectroscopy of Semi-insulating Single Crystal Cs2Hg6S7
- Author(s)
- Liu, Z, Peters, JA, Li, H, Kanatzidis, MG, Im, J, Jin, Hosub, Freeman, AJ, Wessels, BW
- Issued Date
- 2015-01
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, v.44, pp.222 - 226
- Abstract
- The ternary compound Cs2Hg6S7 has shown considerable promise as a wide gap semiconductor for hard radiation detection at room temperature. We report on the measurement of defect levels in Cs2Hg6S7 using photo-induced current transient spectroscopy. We observe a series of defect levels with mean activation energies of 0.053, 0.052, 0.34, 0.35, and 0.46 eV. The defects are attributed to Cs vacancies and Cs and Hg antisite defects. Defect capture cross-sections are in the range 10(-20)-10(-15) cm(2).
- Publisher
- SPRINGER
- ISSN
- 0361-5235
- Keyword (Author)
- Cs-based semiconductor, wide gap semiconductor, photoconductivity, defects, gamma-ray
- Keyword
- RESISTIVITY BULK MATERIAL, DEEP LEVELS, DETECTORS, CDTE
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.