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Issue Date	Title	Author(s)	Type	View	Altmetrics
2020-04	Tunable Current Transport in PdSe2 via Layer-by-Layer Thickness Modulation by Mild Plasma	Das, Tanmoy; Seo, Dongwook; Seo, Jae Eun, et al	ARTICLE	10	Tunable Current Transport in PdSe2 via Layer-by-Layer Thickness Modulation by Mild Plasma
2020-02	Theoretical Analysis of Ballistic Current Transport in Monolayer Black Arsenic MOSFETs	Seo, Jae Eun; Seo, Dongwook; Chang, Jiwon	ARTICLE	137	Theoretical Analysis of Ballistic Current Transport in Monolayer Black Arsenic MOSFETs
2019-07	Tunnelling-based ternary metal–oxide–semiconductor technology	Jeong, Jae Won; Choi, Young Eun; Kim, Woo Seok, et al	ARTICLE	710	Tunnelling-based ternary metal–oxide–semiconductor technology
2019-03	Doping-Free Arsenene Heterostructure Metal-Oxide-Semiconductor Field Effect Transistors Enabled by Thickness Modulated Semiconductor to Metal Transition in Arsenene	Seo, Dongwook; Chang, Jiwon	ARTICLE	172	Doping-Free Arsenene Heterostructure Metal-Oxide-Semiconductor Field Effect Transistors Enabled by Thickness Modulated Semiconductor to Metal Transition in Arsenene
2018-09	Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky Contacts	Sarangapani, Prasad; Weber, Cory; Chang, Jiwon, et al	ARTICLE	31	Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky Contacts
2018-07	Novel antimonene tunneling field-effect transistors using an abrupt transition from semiconductor to metal in monolayer and multilayer antimonene heterostructures	Chang, Jiwon	ARTICLE	256	Novel antimonene tunneling field-effect transistors using an abrupt transition from semiconductor to metal in monolayer and multilayer antimonene heterostructures
2015-12	Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide	Valsaraj, Amithraj; Chang, Jiwon; Rai, Amritesh, et al	ARTICLE	485	Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide
2015-07	Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation	Rai, Amritesh; Valsaraj, Amithraj; Movva, Hema C. P., et al	ARTICLE	522	Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation
2015-06	Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors	Chang, Jiwon	ARTICLE	395	Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors
2015-04	Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETs	Chang, Jiwon	ARTICLE	334	Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETs
2015-02	Theoretical study of phosphorene tunneling field effect transistors	Chang, Jiwon; Hobbs, Chris	ARTICLE	355	Theoretical study of phosphorene tunneling field effect transistors
2014-04	Atomistic simulation of the electronic states of adatoms in monolayer MoS2	Chang, Jiwon; Larentis, Stefano; Tutuc, Emanuel, et al	ARTICLE	384	Atomistic simulation of the electronic states of adatoms in monolayer MoS2
2014-02	Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors	Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.	ARTICLE	378	Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors
2013-11	Atomistic full-band simulations of monolayer MoS2 transistors	Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.	ARTICLE	411	Atomistic full-band simulations of monolayer MoS2 transistors
2012-12	Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors	Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.	ARTICLE	417	Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
2011-10	Dielectric capping effects on binary and ternary topological insulator surface states	Chang, Jiwon; Jadaun, Priyamvada; Register, Leonard F., et al	ARTICLE	425	Dielectric capping effects on binary and ternary topological insulator surface states
2011-06	Density functional study of ternary topological insulator thin films	Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K., et al	ARTICLE	390	Density functional study of ternary topological insulator thin films
2010-08	Analytical Model of Short-Channel Double-Gate JFETs	Chang, Jiwon; Kapoor, Ashok K.; Register, Leonard F., et al	ARTICLE	492	Analytical Model of Short-Channel Double-Gate JFETs

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