사진

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Chang, Jiwon (장지원)

Department
School of Electrical and Computer Engineering(전기전자컴퓨터공학부)
Research Interests
Nanoscale devices based on non-conventional materials, quantum and Boltzmann transport simulation of nanoscale devices, ab-initio simulation of non-conventional materials
Lab
Exploratory Device Research Lab
Website
http://edrl.unist.ac.kr/
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Issue DateTitleAuthor(s)TypeViewAltmetrics
2018-07Novel antimonene tunneling field-effect transistors using an abrupt transition from semiconductor to metal in monolayer and multilayer antimonene heterostructuresChang, JiwonARTICLE88 Novel antimonene tunneling field-effect transistors using an abrupt transition from semiconductor to metal in monolayer and multilayer antimonene heterostructures
2015-12Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxideValsaraj, Amithraj; Chang, Jiwon; Rai, Amritesh, et alARTICLE315 Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide
2015-07Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide EncapsulationRai, Amritesh; Valsaraj, Amithraj; Movva, Hema C. P., et alARTICLE360 Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation
2015-06Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistorsChang, JiwonARTICLE251 Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors
2015-04Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETsChang, JiwonARTICLE194 Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETs
2015-02Theoretical study of phosphorene tunneling field effect transistorsChang, Jiwon; Hobbs, ChrisARTICLE226 Theoretical study of phosphorene tunneling field effect transistors
2014-04Atomistic simulation of the electronic states of adatoms in monolayer MoS2Chang, Jiwon; Larentis, Stefano; Tutuc, Emanuel, et alARTICLE230 Atomistic simulation of the electronic states of adatoms in monolayer MoS2
2014-02Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistorsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE247 Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors
2013-11Atomistic full-band simulations of monolayer MoS2 transistorsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE250 Atomistic full-band simulations of monolayer MoS2 transistors
2012-12Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistorsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE257 Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
2011-10Dielectric capping effects on binary and ternary topological insulator surface statesChang, Jiwon; Jadaun, Priyamvada; Register, Leonard F., et alARTICLE253 Dielectric capping effects on binary and ternary topological insulator surface states
2011-06Density functional study of ternary topological insulator thin filmsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K., et alARTICLE229 Density functional study of ternary topological insulator thin films
2010-08Analytical Model of Short-Channel Double-Gate JFETsChang, Jiwon; Kapoor, Ashok K.; Register, Leonard F., et alARTICLE341 Analytical Model of Short-Channel Double-Gate JFETs

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