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Chang, Jiwon (장지원) (2017-02~2021-03)

Department: Department of Electrical Engineering(전기전자공학과)

Website: http://edrl.unist.ac.kr/

Lab: Exploratory Device Research Lab. (차세대 소자 연구실)

Research Keywords: Non-Conventional Materials, Next-Generation Devices

Research Interests: Since scaling of silicon MOSFETs technology following Moore’s law will eventually encounter fundamental limits in near future, alternative materials to silicon in conventional MOSFETs or even new device concepts based on revolutionary operating schemes are required more than ever. Our lab is dedicated to uncovering pathways to extend Moore’s law by exploring novel materials and devices through various simulations, fabrication and characterizations of nanoscale devices.

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Issue Date	Title	Author(s)	Type	View	Altmetrics
2021-01	Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition	Das, Tanmoy; Yang, Eunyeong; Seo, Jae Eun, et al	ARTICLE	102	Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition
2020-12	A 2D material-based floating gate device with linear synaptic weight update	Park, Eunpyo; Kim, Minkyung; Kim, Tae Soo, et al	ARTICLE	119	A 2D material-based floating gate device with linear synaptic weight update
2020-11	Scaling and Variation Predictions for Silicon Fin-Based High Electron Mobility Transistor	Kim, Sung-Ho; Park, Jong Yul; Chang, Jiwon, et al	ARTICLE	91	Scaling and Variation Predictions for Silicon Fin-Based High Electron Mobility Transistor
2020-07	Intrinsic limit of contact resistance in the lateral heterostructure of metallic and semiconducting PtSe2	Yang, Eunyeong; Seo, Jae Eun; Seo, Dongwook, et al	ARTICLE	174	Intrinsic limit of contact resistance in the lateral heterostructure of metallic and semiconducting PtSe2
2020-05	Tunable Current Transport in PdSe2 via Layer-by-Layer Thickness Modulation by Mild Plasma	Das, Tanmoy; Seo, Dongwook; Seo, Jae Eun, et al	ARTICLE	149	Tunable Current Transport in PdSe2 via Layer-by-Layer Thickness Modulation by Mild Plasma
2020-02	Theoretical Analysis of Ballistic Current Transport in Monolayer Black Arsenic MOSFETs	Seo, Jae Eun; Seo, Dongwook; Chang, Jiwon	ARTICLE	272	Theoretical Analysis of Ballistic Current Transport in Monolayer Black Arsenic MOSFETs
2019-07	Tunnelling-based ternary metal–oxide–semiconductor technology	Jeong, Jae Won; Choi, Young Eun; Kim, Woo Seok, et al	ARTICLE	1184	Tunnelling-based ternary metal–oxide–semiconductor technology
2019-03	Doping-Free Arsenene Heterostructure Metal-Oxide-Semiconductor Field Effect Transistors Enabled by Thickness Modulated Semiconductor to Metal Transition in Arsenene	Seo, Dongwook; Chang, Jiwon	ARTICLE	298	Doping-Free Arsenene Heterostructure Metal-Oxide-Semiconductor Field Effect Transistors Enabled by Thickness Modulated Semiconductor to Metal Transition in Arsenene
2018-09	Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky Contacts	Sarangapani, Prasad; Weber, Cory; Chang, Jiwon, et al	ARTICLE	140	Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky Contacts
2018-07	Novel antimonene tunneling field-effect transistors using an abrupt transition from semiconductor to metal in monolayer and multilayer antimonene heterostructures	Chang, Jiwon	ARTICLE	395	Novel antimonene tunneling field-effect transistors using an abrupt transition from semiconductor to metal in monolayer and multilayer antimonene heterostructures
2015-12	Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide	Valsaraj, Amithraj; Chang, Jiwon; Rai, Amritesh, et al	ARTICLE	645	Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide
2015-07	Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation	Rai, Amritesh; Valsaraj, Amithraj; Movva, Hema C. P., et al	ARTICLE	667	Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation
2015-06	Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors	Chang, Jiwon	ARTICLE	533	Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors
2015-04	Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETs	Chang, Jiwon	ARTICLE	471	Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETs
2015-02	Theoretical study of phosphorene tunneling field effect transistors	Chang, Jiwon; Hobbs, Chris	ARTICLE	475	Theoretical study of phosphorene tunneling field effect transistors
2014-04	Atomistic simulation of the electronic states of adatoms in monolayer MoS2	Chang, Jiwon; Larentis, Stefano; Tutuc, Emanuel, et al	ARTICLE	533	Atomistic simulation of the electronic states of adatoms in monolayer MoS2
2014-02	Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors	Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.	ARTICLE	516	Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors
2013-11	Atomistic full-band simulations of monolayer MoS2 transistors	Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.	ARTICLE	549	Atomistic full-band simulations of monolayer MoS2 transistors
2012-12	Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors	Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.	ARTICLE	600	Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
2011-10	Dielectric capping effects on binary and ternary topological insulator surface states	Chang, Jiwon; Jadaun, Priyamvada; Register, Leonard F., et al	ARTICLE	604	Dielectric capping effects on binary and ternary topological insulator surface states

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