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Chang, Jiwon (장지원)

Department
Department of Electrical Engineering(전기전자공학과)
Website
http://edrl.unist.ac.kr/
Lab
Exploratory Device Research Lab. (차세대 소자 연구실)
Research Keywords
Non-Conventional Materials, Next-Generation Devices
Research Interests
Since scaling of silicon MOSFETs technology following Moore’s law will eventually encounter fundamental limits in near future, alternative materials to silicon in conventional MOSFETs or even new device concepts based on revolutionary operating schemes are required more than ever. Our lab is dedicated to uncovering pathways to extend Moore’s law by exploring novel materials and devices through various simulations, fabrication and characterizations of nanoscale devices.
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Issue DateTitleAuthor(s)TypeViewAltmetrics
2020-12A 2D material-based floating gate device with linear synaptic weight updatePark, Eunpyo; Kim, Minkyung; Kim, Tae Soo, et alARTICLE63 A 2D material-based floating gate device with linear synaptic weight update
2020-12Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase TransitionDas, Tanmoy; Yang, Eunyeong; Seo, Jae Eun, et alARTICLE55 Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition
2020-11Scaling and Variation Predictions for Silicon Fin-Based High Electron Mobility TransistorKim, Sung-Ho; Park, Jong Yul; Chang, Jiwon, et alARTICLE54 Scaling and Variation Predictions for Silicon Fin-Based High Electron Mobility Transistor
2020-07Intrinsic limit of contact resistance in the lateral heterostructure of metallic and semiconducting PtSe2Yang, Eunyeong; Seo, Jae Eun; Seo, Dongwook, et alARTICLE147 Intrinsic limit of contact resistance in the lateral heterostructure of metallic and semiconducting PtSe2
2020-05Tunable Current Transport in PdSe2 via Layer-by-Layer Thickness Modulation by Mild PlasmaDas, Tanmoy; Seo, Dongwook; Seo, Jae Eun, et alARTICLE123 Tunable Current Transport in PdSe2 via Layer-by-Layer Thickness Modulation by Mild Plasma
2020-02Theoretical Analysis of Ballistic Current Transport in Monolayer Black Arsenic MOSFETsSeo, Jae Eun; Seo, Dongwook; Chang, JiwonARTICLE242 Theoretical Analysis of Ballistic Current Transport in Monolayer Black Arsenic MOSFETs
2019-07Tunnelling-based ternary metal–oxide–semiconductor technologyJeong, Jae Won; Choi, Young Eun; Kim, Woo Seok, et alARTICLE1077 Tunnelling-based ternary metal–oxide–semiconductor technology
2019-03Doping-Free Arsenene Heterostructure Metal-Oxide-Semiconductor Field Effect Transistors Enabled by Thickness Modulated Semiconductor to Metal Transition in ArseneneSeo, Dongwook; Chang, JiwonARTICLE264 Doping-Free Arsenene Heterostructure Metal-Oxide-Semiconductor Field Effect Transistors Enabled by Thickness Modulated Semiconductor to Metal Transition in Arsenene
2018-09Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky ContactsSarangapani, Prasad; Weber, Cory; Chang, Jiwon, et alARTICLE113 Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky Contacts
2018-07Novel antimonene tunneling field-effect transistors using an abrupt transition from semiconductor to metal in monolayer and multilayer antimonene heterostructuresChang, JiwonARTICLE363 Novel antimonene tunneling field-effect transistors using an abrupt transition from semiconductor to metal in monolayer and multilayer antimonene heterostructures
2015-12Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxideValsaraj, Amithraj; Chang, Jiwon; Rai, Amritesh, et alARTICLE599 Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide
2015-07Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide EncapsulationRai, Amritesh; Valsaraj, Amithraj; Movva, Hema C. P., et alARTICLE626 Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation
2015-06Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistorsChang, JiwonARTICLE497 Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors
2015-04Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETsChang, JiwonARTICLE440 Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETs
2015-02Theoretical study of phosphorene tunneling field effect transistorsChang, Jiwon; Hobbs, ChrisARTICLE448 Theoretical study of phosphorene tunneling field effect transistors
2014-04Atomistic simulation of the electronic states of adatoms in monolayer MoS2Chang, Jiwon; Larentis, Stefano; Tutuc, Emanuel, et alARTICLE501 Atomistic simulation of the electronic states of adatoms in monolayer MoS2
2014-02Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistorsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE478 Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors
2013-11Atomistic full-band simulations of monolayer MoS2 transistorsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE511 Atomistic full-band simulations of monolayer MoS2 transistors
2012-12Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistorsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE557 Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
2011-10Dielectric capping effects on binary and ternary topological insulator surface statesChang, Jiwon; Jadaun, Priyamvada; Register, Leonard F., et alARTICLE541 Dielectric capping effects on binary and ternary topological insulator surface states

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