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Issue Date	Title	Author(s)	Type	View	Altmetrics
2018-07	Novel antimonene tunneling field-effect transistors using an abrupt transition from semiconductor to metal in monolayer and multilayer antimonene heterostructures	Chang, Jiwon	ARTICLE	88	Novel antimonene tunneling field-effect transistors using an abrupt transition from semiconductor to metal in monolayer and multilayer antimonene heterostructures
2015-12	Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide	Valsaraj, Amithraj; Chang, Jiwon; Rai, Amritesh, et al	ARTICLE	315	Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide
2015-07	Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation	Rai, Amritesh; Valsaraj, Amithraj; Movva, Hema C. P., et al	ARTICLE	360	Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation
2015-06	Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors	Chang, Jiwon	ARTICLE	251	Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors
2015-04	Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETs	Chang, Jiwon	ARTICLE	194	Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETs
2015-02	Theoretical study of phosphorene tunneling field effect transistors	Chang, Jiwon; Hobbs, Chris	ARTICLE	226	Theoretical study of phosphorene tunneling field effect transistors
2014-04	Atomistic simulation of the electronic states of adatoms in monolayer MoS2	Chang, Jiwon; Larentis, Stefano; Tutuc, Emanuel, et al	ARTICLE	230	Atomistic simulation of the electronic states of adatoms in monolayer MoS2
2014-02	Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors	Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.	ARTICLE	247	Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors
2013-11	Atomistic full-band simulations of monolayer MoS2 transistors	Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.	ARTICLE	250	Atomistic full-band simulations of monolayer MoS2 transistors
2012-12	Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors	Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.	ARTICLE	257	Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
2011-10	Dielectric capping effects on binary and ternary topological insulator surface states	Chang, Jiwon; Jadaun, Priyamvada; Register, Leonard F., et al	ARTICLE	253	Dielectric capping effects on binary and ternary topological insulator surface states
2011-06	Density functional study of ternary topological insulator thin films	Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K., et al	ARTICLE	229	Density functional study of ternary topological insulator thin films
2010-08	Analytical Model of Short-Channel Double-Gate JFETs	Chang, Jiwon; Kapoor, Ashok K.; Register, Leonard F., et al	ARTICLE	341	Analytical Model of Short-Channel Double-Gate JFETs

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