2020-12 | A 2D material-based floating gate device with linear synaptic weight update | Park, Eunpyo; Kim, Minkyung; Kim, Tae Soo, et al | ARTICLE | 63 |
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2020-12 | Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition | Das, Tanmoy; Yang, Eunyeong; Seo, Jae Eun, et al | ARTICLE | 55 |
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2020-11 | Scaling and Variation Predictions for Silicon Fin-Based High Electron Mobility Transistor | Kim, Sung-Ho; Park, Jong Yul; Chang, Jiwon, et al | ARTICLE | 54 |
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2020-07 | Intrinsic limit of contact resistance in the lateral heterostructure of metallic and semiconducting PtSe2 | Yang, Eunyeong; Seo, Jae Eun; Seo, Dongwook, et al | ARTICLE | 147 |
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2020-05 | Tunable Current Transport in PdSe2 via Layer-by-Layer Thickness Modulation by Mild Plasma | Das, Tanmoy; Seo, Dongwook; Seo, Jae Eun, et al | ARTICLE | 123 |
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2020-02 | Theoretical Analysis of Ballistic Current Transport in Monolayer Black Arsenic MOSFETs | Seo, Jae Eun; Seo, Dongwook; Chang, Jiwon | ARTICLE | 242 |
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2019-07 | Tunnelling-based ternary metal–oxide–semiconductor technology | Jeong, Jae Won; Choi, Young Eun; Kim, Woo Seok, et al | ARTICLE | 1077 |
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2019-03 | Doping-Free Arsenene Heterostructure Metal-Oxide-Semiconductor Field Effect Transistors Enabled by Thickness Modulated Semiconductor to Metal Transition in Arsenene | Seo, Dongwook; Chang, Jiwon | ARTICLE | 264 |
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2018-09 | Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky Contacts | Sarangapani, Prasad; Weber, Cory; Chang, Jiwon, et al | ARTICLE | 113 |
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2018-07 | Novel antimonene tunneling field-effect transistors using an abrupt transition from semiconductor to metal in monolayer and multilayer antimonene heterostructures | Chang, Jiwon | ARTICLE | 363 |
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2015-12 | Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide | Valsaraj, Amithraj; Chang, Jiwon; Rai, Amritesh, et al | ARTICLE | 599 |
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2015-07 | Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation | Rai, Amritesh; Valsaraj, Amithraj; Movva, Hema C. P., et al | ARTICLE | 626 |
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2015-06 | Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors | Chang, Jiwon | ARTICLE | 497 |
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2015-04 | Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETs | Chang, Jiwon | ARTICLE | 440 |
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2015-02 | Theoretical study of phosphorene tunneling field effect transistors | Chang, Jiwon; Hobbs, Chris | ARTICLE | 448 |
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2014-04 | Atomistic simulation of the electronic states of adatoms in monolayer MoS2 | Chang, Jiwon; Larentis, Stefano; Tutuc, Emanuel, et al | ARTICLE | 501 |
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2014-02 | Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors | Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K. | ARTICLE | 478 |
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2013-11 | Atomistic full-band simulations of monolayer MoS2 transistors | Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K. | ARTICLE | 511 |
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2012-12 | Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors | Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K. | ARTICLE | 557 |
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2011-10 | Dielectric capping effects on binary and ternary topological insulator surface states | Chang, Jiwon; Jadaun, Priyamvada; Register, Leonard F., et al | ARTICLE | 541 |
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