사진

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Choi, Kyoung Jin (최경진)

Department
Department of Materials Science and Engineering(신소재공학과)
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Issue DateTitleAuthor(s)TypeViewAltmetrics
2007-12Interfacial coherency and ferroelectricity of BaTiO(3)/SrTiO(3) superlattice filmsLi, Y. L.; Hu, S. Y.; Tenne, D., et alARTICLE550 Interfacial coherency and ferroelectricity of BaTiO(3)/SrTiO(3) superlattice films
2007-11Evolution of optical phonons in CdS nanowires, nanobelts, and nanosheetsLee, K.-Y.; Lim, J.-R.; Rho, H., et alARTICLE558 Evolution of optical phonons in CdS nanowires, nanobelts, and nanosheets
2007-10Highly conductive coaxial SnO2-In2O3 heterostructured nanowires for li ion battery electrodesKim, Dong-Wan; Hwang, In-Sung; Kwon, S. Joon, et alARTICLE624 Highly conductive coaxial SnO2-In2O3 heterostructured nanowires for li ion battery electrodes
2007-09Prediction of ferroelectricity in BaTiO3/SrTiO3 superlattices with domainsLi, Y. L; Hu, S. Y.; Tenne, D., et alARTICLE640 Prediction of ferroelectricity in BaTiO3/SrTiO3 superlattices with domains
2006-09Probing nanoscale ferroelectricity by ultraviolet Raman spectroscopyTenne, D. A.; Bruchhausen, A.; Lanzillotti-Kimura, N. D., et alARTICLE613 Probing nanoscale ferroelectricity by ultraviolet Raman spectroscopy
2006Stabilization of monodomain polarization in ultrathin PbTiO3 filmsFong, DD; Kolpak, AM; Eastman, JA, et alARTICLE952 Stabilization of monodomain polarization in ultrathin PbTiO3 films
2005-03Fermi level pinning on Si0.83Ge0.17 surface by inductively coupled plasma treatmentKim, IG; Choi, Kyoung Jin; Lee, JLARTICLE630 Fermi level pinning on Si0.83Ge0.17 surface by inductively coupled plasma treatment
2004-11Enhancement of ferroelectricity in strained BaTiO3 thin filmsChoi, Kyoung Jin; Biegalski, M; Li, YL, et alARTICLE715 Enhancement of ferroelectricity in strained BaTiO3 thin films
2003-09Electrical characteristics of metal-insulator-semiconductor Schottky diodes using a photowashing treatment in AlzGa1-xAs/InGaAs (X=0.75) pseudimorphic high electron mobility transistorsHan, SY; Choi, Kyoung Jin; Lee, JL, et alARTICLE678 Electrical characteristics of metal-insulator-semiconductor Schottky diodes using a photowashing treatment in AlzGa1-xAs/InGaAs (X=0.75) pseudimorphic high electron mobility transistors
2003-08Degradation mechanism of Schottky diodes on inductively coupled plasma-etched n-type 4H-SiCChoi, Kyoung Jin; Han, S.Y; Lee, J.-LARTICLE569 Degradation mechanism of Schottky diodes on inductively coupled plasma-etched n-type 4H-SiC
2003-08Au/Ge/Ni/Au and Pd/Ge/Ti/Au Ohmic contacts to AlxGa1-xAs/InGaAs (x=0.75) pseudomorphic high electron mobility transistorChoi, Kyoung Jin; Han, SY; Lee, JL, et alARTICLE838
2003-02Observation of inductively coupled-plasma-induced damage on n-type GaN using deep-level transient spectroscopyChoi, Kyoung Jin; Jang, HW; Lee, JLARTICLE636 Observation of inductively coupled-plasma-induced damage on n-type GaN using deep-level transient spectroscopy
2002-12Characterization of inductively-coupled-plasma damage on n-type GaN using deep-level transient spectroscopy and synchrotron radiation photoemission spectroscopyChoi, Kyoung Jin; Jang, HW; Lee, JLARTICLE601 Characterization of inductively-coupled-plasma damage on n-type GaN using deep-level transient spectroscopy and synchrotron radiation photoemission spectroscopy
2002-07Room-temperature ohmic contact on AlGaN/GaN heterostructure with surface treatment using N-2 inductively coupled plasmaJeon, CM; Jang, HW; Choi, Kyoung Jin, et alARTICLE649 Room-temperature ohmic contact on AlGaN/GaN heterostructure with surface treatment using N-2 inductively coupled plasma
2002-07Effects of photowashing treatment on electrical properties of an AlGaN/GaN heterostructure field-effect transistorChoi, Kyoung Jin; Jeon, CM; Jang, HW, et alARTICLE622 Effects of photowashing treatment on electrical properties of an AlGaN/GaN heterostructure field-effect transistor
2002-05Effects of photowashing treatment on gate leakage current of GaAs metal-semiconductor field-effect transistorsChoi, Kyoung Jin; Moon, JK; Park, M, et alARTICLE670 Effects of photowashing treatment on gate leakage current of GaAs metal-semiconductor field-effect transistors
2002-05Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contactJeon, CM; Jang, HW; Choi, Kyoung Jin, et alARTICLE690 Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact
2002-01Effects of photowashing treatment on electrical properties of a GaAs metal-semiconductor field-effect transistorChoi, Kyoung Jin; Lee, JL; Mun, JK, et alARTICLE597 Effects of photowashing treatment on electrical properties of a GaAs metal-semiconductor field-effect transistor
2001-10GaAs metal-semiconductor field-effect transistor에서 표면 결함이 소자의 전달컨덕턴스 분산 및 게이트 표면 누설 전류에 미치는 영향Choi, Kyoung Jin; Lee, Jong-LamARTICLE672
2001-07Effects of hot-electron stress on electrical performances in AlGaAs/InGaAs pseudomorphic high electron transistorsChoi, Kyoung Jin; Lee, JLARTICLE615 Effects of hot-electron stress on electrical performances in AlGaAs/InGaAs pseudomorphic high electron transistors

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