| 2007-12 | Interfacial coherency and ferroelectricity of BaTiO(3)/SrTiO(3) superlattice films | Li, Y. L.; Hu, S. Y.; Tenne, D., et al | ARTICLE | 550 |
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| 2007-11 | Evolution of optical phonons in CdS nanowires, nanobelts, and nanosheets | Lee, K.-Y.; Lim, J.-R.; Rho, H., et al | ARTICLE | 558 |
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| 2007-10 | Highly conductive coaxial SnO2-In2O3 heterostructured nanowires for li ion battery electrodes | Kim, Dong-Wan; Hwang, In-Sung; Kwon, S. Joon, et al | ARTICLE | 624 |
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| 2007-09 | Prediction of ferroelectricity in BaTiO3/SrTiO3 superlattices with domains | Li, Y. L; Hu, S. Y.; Tenne, D., et al | ARTICLE | 640 |
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| 2006-09 | Probing nanoscale ferroelectricity by ultraviolet Raman spectroscopy | Tenne, D. A.; Bruchhausen, A.; Lanzillotti-Kimura, N. D., et al | ARTICLE | 613 |
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| 2006 | Stabilization of monodomain polarization in ultrathin PbTiO3 films | Fong, DD; Kolpak, AM; Eastman, JA, et al | ARTICLE | 952 |
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| 2005-03 | Fermi level pinning on Si0.83Ge0.17 surface by inductively coupled plasma treatment | Kim, IG; Choi, Kyoung Jin; Lee, JL | ARTICLE | 630 |
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| 2004-11 | Enhancement of ferroelectricity in strained BaTiO3 thin films | Choi, Kyoung Jin; Biegalski, M; Li, YL, et al | ARTICLE | 715 |
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| 2003-09 | Electrical characteristics of metal-insulator-semiconductor Schottky diodes using a photowashing treatment in AlzGa1-xAs/InGaAs (X=0.75) pseudimorphic high electron mobility transistors | Han, SY; Choi, Kyoung Jin; Lee, JL, et al | ARTICLE | 678 |
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| 2003-08 | Degradation mechanism of Schottky diodes on inductively coupled plasma-etched n-type 4H-SiC | Choi, Kyoung Jin; Han, S.Y; Lee, J.-L | ARTICLE | 569 |
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| 2003-08 | Au/Ge/Ni/Au and Pd/Ge/Ti/Au Ohmic contacts to AlxGa1-xAs/InGaAs (x=0.75) pseudomorphic high electron mobility transistor | Choi, Kyoung Jin; Han, SY; Lee, JL, et al | ARTICLE | 838 |
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| 2003-02 | Observation of inductively coupled-plasma-induced damage on n-type GaN using deep-level transient spectroscopy | Choi, Kyoung Jin; Jang, HW; Lee, JL | ARTICLE | 636 |
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| 2002-12 | Characterization of inductively-coupled-plasma damage on n-type GaN using deep-level transient spectroscopy and synchrotron radiation photoemission spectroscopy | Choi, Kyoung Jin; Jang, HW; Lee, JL | ARTICLE | 601 |
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| 2002-07 | Room-temperature ohmic contact on AlGaN/GaN heterostructure with surface treatment using N-2 inductively coupled plasma | Jeon, CM; Jang, HW; Choi, Kyoung Jin, et al | ARTICLE | 649 |
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| 2002-07 | Effects of photowashing treatment on electrical properties of an AlGaN/GaN heterostructure field-effect transistor | Choi, Kyoung Jin; Jeon, CM; Jang, HW, et al | ARTICLE | 622 |
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| 2002-05 | Effects of photowashing treatment on gate leakage current of GaAs metal-semiconductor field-effect transistors | Choi, Kyoung Jin; Moon, JK; Park, M, et al | ARTICLE | 670 |
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| 2002-05 | Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact | Jeon, CM; Jang, HW; Choi, Kyoung Jin, et al | ARTICLE | 690 |
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| 2002-01 | Effects of photowashing treatment on electrical properties of a GaAs metal-semiconductor field-effect transistor | Choi, Kyoung Jin; Lee, JL; Mun, JK, et al | ARTICLE | 597 |
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| 2001-10 | GaAs metal-semiconductor field-effect transistor에서 표면 결함이 소자의 전달컨덕턴스 분산 및 게이트 표면 누설 전류에 미치는 영향 | Choi, Kyoung Jin; Lee, Jong-Lam | ARTICLE | 672 |
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| 2001-07 | Effects of hot-electron stress on electrical performances in AlGaAs/InGaAs pseudomorphic high electron transistors | Choi, Kyoung Jin; Lee, JL | ARTICLE | 615 |
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