사진

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Kwon, Soon-Yong (권순용)

Department
School of Materials Science and Engineering(신소재공학부)
Research Interests
Semiconductor Epitaxy, thin film technology & surface/ interface Science
Lab
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Website
http://sykwon.blogspot.kr/
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Issue DateTitleAuthor(s)TypeViewAltmetrics
2006-11Electrical study on indium-rich InGaN/GaN multi-quantum-well systemKim, E. K; Kim, J. S.; Kwon, Soon-Yong, et alARTICLE469
2006-11Electroreflectance and photoluminescence study on InGaN alloysYoon, Jung-Won; Kim, Sung Soo; Cheong, Hyeonsik, et alARTICLE424
2006-07Strong near-ultraviolet and blue emissions at room temperature from two-step grown In-rich InGaN/GaN multiple quantum wellsKwon, Soon-Yong; Baik, S. -I.; Kim, H. J., et alARTICLE463 Strong near-ultraviolet and blue emissions at room temperature from two-step grown In-rich InGaN/GaN multiple quantum wells
2006-02In-rich InGaN/GaN quantum wells grown by metal-organic chemical vapor depositionKwon, Soon-Yong; Kim, HJ; Na, H, et alARTICLE488 In-rich InGaN/GaN quantum wells grown by metal-organic chemical vapor deposition
2006Effect of growth interruption on optical properties of In-rich InGaN/GaN single quantum well structuresSun, Yuanping; Cho, Yong-Hoon; Kim, H. M., et alARTICLE830 Effect of growth interruption on optical properties of In-rich InGaN/GaN single quantum well structures
2005-10Strong room-temperature near-ultraviolet emission from In-rich InGaN/GaN nanostructures grown by metalorganic chemical vapor depositionKwon, Soon-Yong; Kim, HJ; Kim, YW, et alARTICLE481 Strong room-temperature near-ultraviolet emission from In-rich InGaN/GaN nanostructures grown by metalorganic chemical vapor deposition
2005-10Electroreflectance and photoluminescence study of InNYoon, JW; Kim, SS; Cheong, H, et alARTICLE459 Electroreflectance and photoluminescence study of InN
2005-07Study on energy band of InGaN/GaN self-assembled quantum dots by deep level transient spectroscopyKim, EK; Kim, JS; Kwon, Soon-Yong, et alARTICLE452 Study on energy band of InGaN/GaN self-assembled quantum dots by deep level transient spectroscopy
2005-06Growth of in-rich InGaN/GaN nanostructures by metal-organic chemical vapor deposition and their optical propertiesKwon, Soon-Yong; Kim, HJ; Na, H, et alARTICLE447
2005-05Room temperature near-ultraviolet emission from In-rich InGaN/GaN multiple quantum wellsKwon, Soon-Yong; Baik, SI; Kim, YW, et alARTICLE498 Room temperature near-ultraviolet emission from In-rich InGaN/GaN multiple quantum wells
2004-12Optical properties of In-rich InGaN/GaN single quantum well structures with high density of clustersSun, YP; Cho, YH; Kim, HM, et alARTICLE390
2004-12Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional gradingKwon, Soon-Yong; Cho, MH; Moon, P, et alARTICLE578 Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional grading
2004-09The formation of cubic GaNAs phase during the growth of thin GaNAs epilayers on GaN at low temperatures by metalorganic chemical vapor depositionNa, H; Kim, HJ; Kwon, Soon-Yong, et alARTICLE501 The formation of cubic GaNAs phase during the growth of thin GaNAs epilayers on GaN at low temperatures by metalorganic chemical vapor deposition
2004-08Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor depositionKim, HJ; Na, H; Kwon, Soon-Yong, et alARTICLE446 Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition
2003-06Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic propertiesKim, HJ; Kwon, Soon-Yong; Yim, S, et alARTICLE556 Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic properties
2003-05Effect of growth interruption on In-rich InGaN/GaN single quantum well structuresKwon, Soon-Yong; Kim, HJ; Na, H, et alARTICLE496 Effect of growth interruption on In-rich InGaN/GaN single quantum well structures
2003The growth of In-rich InGaN/GaN single quantum wells by metalorganic chemical vapor depositionKim, HJ; Na, H; Kwon, Soon-Yong, et alARTICLE562 The growth of In-rich InGaN/GaN single quantum wells by metalorganic chemical vapor deposition
2002Reduction of gallium vacancy concentration in gallium nitride grown with preheated ammoniaKwon, Soon-Yong; Kim, HJ; Kee, B, et alARTICLE623 Reduction of gallium vacancy concentration in gallium nitride grown with preheated ammonia
2000-12In-situ, real-time spectral reflectance monitoring of GaN growthNa, H; Kim, HJ; Kwon, Soon-Yong, et alARTICLE502

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