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Lee, Geunsik
Computational Research on Electronic Structure and Transport in Condensed Materials
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dc.citation.startPage 094109 -
dc.citation.title PHYSICAL REVIEW B -
dc.citation.volume 113 -
dc.contributor.author Park, In Kee -
dc.contributor.author Lee, Geunsik -
dc.date.accessioned 2026-03-31T14:31:01Z -
dc.date.available 2026-03-31T14:31:01Z -
dc.date.created 2026-03-24 -
dc.date.issued 2026-03 -
dc.description.abstract Ferroelectric (FE) instability in the puckered lattice of arsenic (α-As) is investigated using density functional
theory (DFT) calculations. A bilayer (BL) structure with the most stable AA-stacked configuration is found to
exhibit spontaneous ferroelectric polarization arising from an intralayer distortion analogous to that observed
in α-Bi monolayers. Unlike conventional two-dimensional (2D) ferroelectricity, which is typically driven by
sliding-induced charge transfer, the observed polarization in α-As primarily originates from a lattice contraction
along the armchair direction caused by inverted band occupation facilitated through interlayer electron hopping.
The calculated polarization reaches 0.63 × 10−10 C/m with the associated transition barrier 5.4 meV/u.c.,
and our molecular dynamics simulations using machine-learned interatomic potential show the FE ordering
persisting up to ∼100 or 300 K under a uniaxial compression of 0% or −4%, respectively. These results provide
new insight into distinct mechanism of 2D ferroelectricity governed by interlayer electronic coupling.
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dc.identifier.bibliographicCitation PHYSICAL REVIEW B, v.113, pp.094109 -
dc.identifier.doi 10.1103/2nk2-76f4 -
dc.identifier.issn 2469-9950 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/91173 -
dc.language 영어 -
dc.publisher AMER PHYSICAL SOC -
dc.title Interlayer coupling induced ferroelectricity in bilayer α-As -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -

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