dc.citation.number |
16 |
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dc.citation.title |
APPLIED PHYSICS LETTERS |
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dc.citation.volume |
95 |
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dc.contributor.author |
Jeong, Hu Young |
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dc.contributor.author |
Lee, Jeong Yong |
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dc.contributor.author |
Choi, Sung-Yool |
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dc.contributor.author |
Kim, Jeong Won |
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dc.date.accessioned |
2023-12-22T07:38:53Z |
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dc.date.available |
2023-12-22T07:38:53Z |
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dc.date.created |
2014-11-19 |
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dc.date.issued |
2009-10 |
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dc.description.abstract |
We report a direct observation of the microscopic origin of the bipolar resistive switching behavior in nanoscale titanium oxide films. Through a high-resolution transmission electron microscopy, an analytical transmission electron microscopy technique using energy-filtering transmission electron microscopy, and an in situ x-ray photoelectron spectroscopy, we demonstrated that the oxygen ions piled up at the top interface by an oxidation-reduction between the titanium oxide layer and the top Al metal electrode. We also found that the drift of oxygen ions during the on/off switching induced the bipolar resistive switching in the titanium oxide thin films. |
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dc.identifier.bibliographicCitation |
APPLIED PHYSICS LETTERS, v.95, no.16 |
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dc.identifier.doi |
10.1063/1.3251784 |
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dc.identifier.issn |
0003-6951 |
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dc.identifier.scopusid |
2-s2.0-70350378210 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/9013 |
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dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=70350378210 |
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dc.identifier.wosid |
000271218200031 |
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dc.language |
영어 |
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dc.publisher |
AMER INST PHYSICS |
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dc.title |
Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
scopus |
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