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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM
  • Insitu-TEM characterization of carbon-based materials using nanofactory STM holder for Li-ion battery application
  • Structural characterization of mesoporous materials using SEM & TEM
  • Interface analysis between various oxides and metals through Cs-corrected (S)TEM
  • Resistive switching mechanism of graphene oxide thin films for RRAM application

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Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films

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Title
Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
Author
Jeong, Hu YoungLee, Jeong YongChoi, Sung-YoolKim, Jeong Won
Keywords
Al-metal; Analytical transmission electron microscopy; Direct observation; Energy-filtering transmission electron microscopies; In-situ; Nano scale; Oxygen ions; Resistive switching; Resistive switching behaviors; Titanium oxide layer; Titanium oxide thin films
Issue Date
2009-10
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.95, no.16, pp. -
Abstract
We report a direct observation of the microscopic origin of the bipolar resistive switching behavior in nanoscale titanium oxide films. Through a high-resolution transmission electron microscopy, an analytical transmission electron microscopy technique using energy-filtering transmission electron microscopy, and an in situ x-ray photoelectron spectroscopy, we demonstrated that the oxygen ions piled up at the top interface by an oxidation-reduction between the titanium oxide layer and the top Al metal electrode. We also found that the drift of oxygen ions during the on/off switching induced the bipolar resistive switching in the titanium oxide thin films.
URI
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DOI
10.1063/1.3251784
ISSN
0003-6951
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