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Baik, Jeong Min
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dc.citation.endPage 293 -
dc.citation.number 2 -
dc.citation.startPage 289 -
dc.citation.title JOURNAL OF CRYSTAL GROWTH -
dc.citation.volume 297 -
dc.contributor.author Shon, Yoon -
dc.contributor.author Jeon, H. C. -
dc.contributor.author Lee, Sejoon -
dc.contributor.author Lee, S. -W. -
dc.contributor.author Kim, D. Y. -
dc.contributor.author Kang, T. W. -
dc.contributor.author Kim, Eun Kyu -
dc.contributor.author Yoon, Chong S. -
dc.contributor.author Kim, C. K. -
dc.contributor.author Park, Y. J. -
dc.contributor.author Kim, Yongmin -
dc.contributor.author Baik, Jeong Min -
dc.contributor.author Lee, J. L. -
dc.date.accessioned 2023-12-22T09:39:18Z -
dc.date.available 2023-12-22T09:39:18Z -
dc.date.created 2014-11-17 -
dc.date.issued 2006-12 -
dc.description.abstract The samples with the Mn concentrations of 0.290% and 0.062% revealed that both in the calculated diffraction pattern and experimental pattern of transmission electron microscopy (TEM), the FCC lattice was still maintained after the Mn doping. The regularly spaced spots of ordered Mn produce the anomalous Hall effect (AHE) showing the characteristics of diluted magnetic semiconductor, which is caused by hole-mediated ferromagnetism due to the increase of hole concentration in tetrahedrally coordinated semiconductor. Ferrornagnetic semiconductor of T-c between 100 and 200 K demonstrated by TEM and AHE can be formed in diluted magnetic semiconductor based on InMnP:Zn epilayers additionally co-doped with Zn. -
dc.identifier.bibliographicCitation JOURNAL OF CRYSTAL GROWTH, v.297, no.2, pp.289 - 293 -
dc.identifier.doi 10.1016/j.jcrysgro.2006.10.133 -
dc.identifier.issn 0022-0248 -
dc.identifier.scopusid 2-s2.0-33845596540 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/8951 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=33845596540 -
dc.identifier.wosid 000243812100005 -
dc.language 영어 -
dc.publisher ELSEVIER SCIENCE BV -
dc.title Enhanced Curie temperature persisting between 100 and 200 K (similar to 50 K by theory) with Mn (similar to 0.290%) based on InMnP : Zn -
dc.type Article -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor metalorganic chemical vapor deposition -
dc.subject.keywordAuthor molecular beam epitaxy -
dc.subject.keywordAuthor magnetic
materials
-
dc.subject.keywordAuthor semiconducting indium phosphide -
dc.subject.keywordPlus DILUTED MAGNETIC SEMICONDUCTOR -
dc.subject.keywordPlus NEUTRAL MANGANESE ACCEPTOR -
dc.subject.keywordPlus III-V
SEMICONDUCTORS
-
dc.subject.keywordPlus ROOM-TEMPERATURE -
dc.subject.keywordPlus FERROMAGNETISM -
dc.subject.keywordPlus GAN -

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