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- Kim, Soo-Hyun
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | KO | - |
| dc.citation.title | 2025 IEEE International Interconnect Technology Conference, IITC 2025 | - |
| dc.contributor.author | Park, Chaehyun | - |
| dc.contributor.author | Kweon, Minjeong | - |
| dc.contributor.author | Mohapatra, Debananda | - |
| dc.contributor.author | Cheon, Taehoon | - |
| dc.contributor.author | Bae, Jong-Seong | - |
| dc.contributor.author | Jeong, Daeyoon | - |
| dc.contributor.author | Park, Young-Bae | - |
| dc.contributor.author | Kim, Soo-Hyun | - |
| dc.date.accessioned | 2025-12-29T17:33:31Z | - |
| dc.date.available | 2025-12-29T17:33:31Z | - |
| dc.date.created | 2025-12-26 | - |
| dc.date.issued | 2025-06-03 | - |
| dc.description.abstract | Achieving precise thickness control and producing noncorrosive byproducts are critical for developing effective semiconductor diffusion barrier. Although atomic layer deposition (ALD) is widely employed for conformal thin films, its application to niobium carbide (NbC) remains underexplored. This study presents the plasma-enhanced ALD (PEALD) of highly conductive NbC | - |
| dc.identifier.bibliographicCitation | 2025 IEEE International Interconnect Technology Conference, IITC 2025 | - |
| dc.identifier.doi | 10.1109/IITC66087.2025.11075505 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/89456 | - |
| dc.language | 영어 | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.title | Atomic Layer Deposited Highly Conductive Niobium Carbide Thin Films as Next-Generation Diffusion Barriers for Cu and Ru Interconnects | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2025-06-02 | - |
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