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- Kim, Soo-Hyun
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | KO | - |
| dc.citation.title | 2025 IEEE International Interconnect Technology Conference, IITC 2025 | - |
| dc.contributor.author | Kim, Jeongha | - |
| dc.contributor.author | Mohapatra, Debananda | - |
| dc.contributor.author | Son, Yeseul | - |
| dc.contributor.author | Jang, Jae Min | - |
| dc.contributor.author | Kim, Sang Bok | - |
| dc.contributor.author | Cheon, Taehoon | - |
| dc.contributor.author | Shong, Boggeun | - |
| dc.contributor.author | Kim, Soo-Hyun | - |
| dc.date.accessioned | 2025-12-29T17:33:27Z | - |
| dc.date.available | 2025-12-29T17:33:27Z | - |
| dc.date.created | 2025-12-26 | - |
| dc.date.issued | 2025-06-04 | - |
| dc.description.abstract | This study designed the ABC-type Ru ALD process using O | - |
| dc.identifier.bibliographicCitation | 2025 IEEE International Interconnect Technology Conference, IITC 2025 | - |
| dc.identifier.doi | 10.1109/IITC66087.2025.11075354 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/89451 | - |
| dc.language | 영어 | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.title | Improved Properties of Atomic Layer Deposited Ru Films by Providing Additional Reactant for Cu Alternative Nanoscale Interconnects | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2025-06-02 | - |
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