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김주영

Kim, Ju-Young
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dc.citation.title ADVANCED SCIENCE -
dc.contributor.author Gu, Ji-Woo -
dc.contributor.author Shim, Jun-Seok -
dc.contributor.author Chae, Minjung -
dc.contributor.author Jung, Yoonseong -
dc.contributor.author Kim, Su-Min -
dc.contributor.author Ryu, Young-In -
dc.contributor.author Lee, Jae-Hwan -
dc.contributor.author Kim, Sung-Woo -
dc.contributor.author Kim, Kyung-Sub -
dc.contributor.author Lee, Tae-Woo -
dc.contributor.author Wyszkowska, Edyta -
dc.contributor.author Shin, Jungho -
dc.contributor.author Jang, Hyejin -
dc.contributor.author Kim, Ju-Young -
dc.contributor.author Ok, Myoung-Ryul -
dc.contributor.author Kim, Jong-Hyoung -
dc.contributor.author Bae, Jae-Young -
dc.contributor.author Kang, Seung-kyun -
dc.date.accessioned 2025-12-09T14:24:53Z -
dc.date.available 2025-12-09T14:24:53Z -
dc.date.created 2025-12-09 -
dc.date.issued 2025-11 -
dc.description.abstract Transient electronic systems offer compelling solutions for sustainable technologies, enabling environmentally benign disposal in ecological settings and eliminating surgical retrieval in biomedical implants. At the core of such systems, biodegradable semiconductors serve as key materials not only for logic operations but also for realizing diverse sensing modalities. Here, a comprehensive study of magnesium silicide (Mg2Si) thin films as a narrow-bandgap, biodegradable semiconductor platform for transient electronics is reported. Polycrystalline Mg2Si thin films are formed via RF magnetron sputtering and thermal annealing, followed by systematic investigation of their dissolution behavior under various pH and ionic conditions. Physiological relevance is confirmed by phosphate-buffered saline testing, while environmental biodegradability is validated under composting conditions. In vitro cytotoxicity assays confirmed the biocompatibility of the material and its degradation byproducts. Mg2Si thin films exhibit an indirect bandgap of approximate to 0.84 eV, intrinsic carrier concentration (>10(18) cm(-3)), and thermal conductivity (<1.8 W m(-1) K-1), along with broadband optical absorbance. Device-level integration into thermoelectric harvesters yielded Seebeck coefficients of approximate to 130 V K-1 and output power exceeding approximate to 0.338 mu W cm(-2) K-2. Photosensors demonstrated photoresponse up to 1300 nm, confirming near-infrared sensitivity. These results establish Mg2Si as a viable semiconductor for transient electronics, expanding the material spectrum beyond conventional wide-bandgap semiconductors. -
dc.identifier.bibliographicCitation ADVANCED SCIENCE -
dc.identifier.doi 10.1002/advs.202518093 -
dc.identifier.issn 2198-3844 -
dc.identifier.scopusid 2-s2.0-105023388352 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/88956 -
dc.identifier.wosid 001624775000001 -
dc.language 영어 -
dc.publisher WILEY -
dc.title Dissolution Study of Biodegradable Magnesium Silicide Thin Films for Transient Electronic Applications -
dc.type Article -
dc.description.isOpenAccess TRUE -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary -
dc.relation.journalResearchArea Chemistry; Science & Technology - Other Topics; Materials Science -
dc.type.docType Article; Early Access -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor biodegradable photosensor -
dc.subject.keywordAuthor biodegradable semiconductor -
dc.subject.keywordAuthor biodegradable thermoelectric generator -
dc.subject.keywordAuthor magnesium silicide -
dc.subject.keywordAuthor transient electronics -
dc.subject.keywordPlus THERMOELECTRIC PROPERTIES -
dc.subject.keywordPlus ELECTRICAL-PROPERTIES -
dc.subject.keywordPlus CRYSTALLINE SILICON -
dc.subject.keywordPlus MG2SI LAYERS -
dc.subject.keywordPlus MG -
dc.subject.keywordPlus DEPENDENCE -
dc.subject.keywordPlus BEHAVIOR -
dc.subject.keywordPlus NANOMEMBRANES -
dc.subject.keywordPlus PASSIVATION -
dc.subject.keywordPlus PHOTODIODE -

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