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| DC Field | Value | Language |
|---|---|---|
| dc.citation.title | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
| dc.contributor.author | Jeong, Hoichang | - |
| dc.contributor.author | Kim, Seungbin | - |
| dc.contributor.author | Shin, Jeongmin | - |
| dc.contributor.author | Lee, Kyuho Jason | - |
| dc.date.accessioned | 2025-11-26T09:53:14Z | - |
| dc.date.available | 2025-11-26T09:53:14Z | - |
| dc.date.created | 2025-11-17 | - |
| dc.date.issued | 2025-10 | - |
| dc.description.abstract | This article presents a remarkably high-density and energy-efficient analog-digital hybrid computing-in-memory (CIM) processor for ternary neural network (TNN) acceleration, utilizing a transpose ternary embedded DRAM bitcell. The proposed CIM processor significantly improves computational robustness and energy efficiency at both the macro- and system-level through key innovations: 1) current-mode vertical analog multiplication-and-accumulation (MAC) with gate voltage biasing in bitcell, reducing MAC variation by 87% under process, voltage, and temperature (PVT) variation; 2) ternary-bit per cycle (TPC) successive approximation register (SAR) analog-to-digital converter (ADC) with a shared capacitor digital-to-analog converter (CDAC), minimizing ADC area overhead to 15% and improving ADC efficiency by 1.49x ; 3) horizontal digital partial sum (Psum) logic for area- and power-efficient Psum among MACs, reducing area by 39% and power by 57% compared to conventional full adder; and 4) input channel-first tiled-convolution that substantially enhances system energy efficiency by eliminating inter-macro data transactions, decreasing the network-on-chip power overhead to 2%. Fabricated in 28 nm CMOS technology, the proposed CIM processor achieves 1.58Mb/mm(2) of cell density, attaining 478 TOPS/W and 273.48TOPS/W of macro and system energy efficiencies, respectively, outperforming state-of-the-art CIM processors. | - |
| dc.identifier.bibliographicCitation | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
| dc.identifier.doi | 10.1109/JSSC.2025.3623671 | - |
| dc.identifier.issn | 0018-9200 | - |
| dc.identifier.scopusid | 2-s2.0-105020316082 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/88561 | - |
| dc.identifier.wosid | 001606790200001 | - |
| dc.language | 영어 | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | HYTEC: Compact and Energy-Efficient Analog-Digital Hybrid CIM With Transpose Ternary eDRAM | - |
| dc.type | Article | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.type.docType | Article; Early Access | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordAuthor | Throughput | - |
| dc.subject.keywordAuthor | Energy efficiency | - |
| dc.subject.keywordAuthor | In-memory computing | - |
| dc.subject.keywordAuthor | Logic | - |
| dc.subject.keywordAuthor | Computer architecture | - |
| dc.subject.keywordAuthor | Common Information Model (computing) | - |
| dc.subject.keywordAuthor | Random access memory | - |
| dc.subject.keywordAuthor | Computational efficiency | - |
| dc.subject.keywordAuthor | Accuracy | - |
| dc.subject.keywordAuthor | Transistors | - |
| dc.subject.keywordAuthor | Analog-digital hybrid computing | - |
| dc.subject.keywordAuthor | computing-in-memory (CIM) | - |
| dc.subject.keywordAuthor | embedded dynamic random access memory (eDRAM) | - |
| dc.subject.keywordAuthor | ternary neural networks (TNNs) | - |
| dc.subject.keywordPlus | COMPUTING SRAM MACRO | - |
| dc.subject.keywordPlus | IN-MEMORY | - |
| dc.subject.keywordPlus | ACCELERATOR | - |
| dc.subject.keywordPlus | OPERATION | - |
| dc.subject.keywordPlus | BINARY | - |
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