File Download

There are no files associated with this item.

  • Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)

Views & Downloads

Detailed Information

Cited time in webofscience Cited time in scopus
Metadata Downloads

Full metadata record

DC Field Value Language
dc.citation.title IEEE JOURNAL OF SOLID-STATE CIRCUITS -
dc.contributor.author Jeong, Hoichang -
dc.contributor.author Kim, Seungbin -
dc.contributor.author Shin, Jeongmin -
dc.contributor.author Lee, Kyuho Jason -
dc.date.accessioned 2025-11-26T09:53:14Z -
dc.date.available 2025-11-26T09:53:14Z -
dc.date.created 2025-11-17 -
dc.date.issued 2025-10 -
dc.description.abstract This article presents a remarkably high-density and energy-efficient analog-digital hybrid computing-in-memory (CIM) processor for ternary neural network (TNN) acceleration, utilizing a transpose ternary embedded DRAM bitcell. The proposed CIM processor significantly improves computational robustness and energy efficiency at both the macro- and system-level through key innovations: 1) current-mode vertical analog multiplication-and-accumulation (MAC) with gate voltage biasing in bitcell, reducing MAC variation by 87% under process, voltage, and temperature (PVT) variation; 2) ternary-bit per cycle (TPC) successive approximation register (SAR) analog-to-digital converter (ADC) with a shared capacitor digital-to-analog converter (CDAC), minimizing ADC area overhead to 15% and improving ADC efficiency by 1.49x ; 3) horizontal digital partial sum (Psum) logic for area- and power-efficient Psum among MACs, reducing area by 39% and power by 57% compared to conventional full adder; and 4) input channel-first tiled-convolution that substantially enhances system energy efficiency by eliminating inter-macro data transactions, decreasing the network-on-chip power overhead to 2%. Fabricated in 28 nm CMOS technology, the proposed CIM processor achieves 1.58Mb/mm(2) of cell density, attaining 478 TOPS/W and 273.48TOPS/W of macro and system energy efficiencies, respectively, outperforming state-of-the-art CIM processors. -
dc.identifier.bibliographicCitation IEEE JOURNAL OF SOLID-STATE CIRCUITS -
dc.identifier.doi 10.1109/JSSC.2025.3623671 -
dc.identifier.issn 0018-9200 -
dc.identifier.scopusid 2-s2.0-105020316082 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/88561 -
dc.identifier.wosid 001606790200001 -
dc.language 영어 -
dc.publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC -
dc.title HYTEC: Compact and Energy-Efficient Analog-Digital Hybrid CIM With Transpose Ternary eDRAM -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Engineering, Electrical & Electronic -
dc.relation.journalResearchArea Engineering -
dc.type.docType Article; Early Access -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor Throughput -
dc.subject.keywordAuthor Energy efficiency -
dc.subject.keywordAuthor In-memory computing -
dc.subject.keywordAuthor Logic -
dc.subject.keywordAuthor Computer architecture -
dc.subject.keywordAuthor Common Information Model (computing) -
dc.subject.keywordAuthor Random access memory -
dc.subject.keywordAuthor Computational efficiency -
dc.subject.keywordAuthor Accuracy -
dc.subject.keywordAuthor Transistors -
dc.subject.keywordAuthor Analog-digital hybrid computing -
dc.subject.keywordAuthor computing-in-memory (CIM) -
dc.subject.keywordAuthor embedded dynamic random access memory (eDRAM) -
dc.subject.keywordAuthor ternary neural networks (TNNs) -
dc.subject.keywordPlus COMPUTING SRAM MACRO -
dc.subject.keywordPlus IN-MEMORY -
dc.subject.keywordPlus ACCELERATOR -
dc.subject.keywordPlus OPERATION -
dc.subject.keywordPlus BINARY -

qrcode

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.