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Woo, Kyung Seok
Emerging Semiconductor Technology Laboratory
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dc.citation.number 10 -
dc.citation.startPage 2209503 -
dc.citation.title ADVANCED MATERIALS -
dc.citation.volume 35 -
dc.contributor.author Jang, Yoon Ho -
dc.contributor.author Han, Janguk -
dc.contributor.author Kim, Jihun -
dc.contributor.author Kim, Woohyun -
dc.contributor.author Woo, Kyung Seok -
dc.contributor.author Kim, Jaehyun -
dc.contributor.author Hwang, Cheol Seong -
dc.date.accessioned 2025-08-11T10:00:04Z -
dc.date.available 2025-08-11T10:00:04Z -
dc.date.created 2025-08-06 -
dc.date.issued 2023-03 -
dc.description.abstract Many big data have interconnected and dynamic graph structures growing over time. Analyzing these graphical data requires the hidden relationship between the nodes in the graphs to be identified, which has conventionally been achieved by finding the effective similarity. However, graphs are generally non-Euclidean, which does not allow finding it. In this study, the non-Euclidean graphs are mapped to a specific crossbar array (CBA) composed of self-rectifying memristors and metal cells at the diagonal positions. The sneak current, an intrinsic physical property in the CBA, allows for the identification of the similarity function. The sneak-current-based similarity function indicates the distance between the nodes, which can be used to predict the probability that unconnected nodes will be connected in the future, connectivity between communities, and neural connections in a brain. When all bit lines of the CBA are connected to the ground, the sneak current is suppressed, and the CBA can be used to search for adjacent nodes. This work demonstrates the physical calculation methods applied to various graphical problems using the CBA composed of the self-rectifying memristor based on the HfO2 switching layer. Moreover, such applications suffer less from the memristors' inherent issues related to their stochastic nature. -
dc.identifier.bibliographicCitation ADVANCED MATERIALS, v.35, no.10, pp.2209503 -
dc.identifier.doi 10.1002/adma.202209503 -
dc.identifier.issn 0935-9648 -
dc.identifier.scopusid 2-s2.0-85147168510 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/87697 -
dc.identifier.wosid 000917771900001 -
dc.language 영어 -
dc.publisher WILEY-V C H VERLAG GMBH -
dc.title Graph Analysis with Multifunctional Self-Rectifying Memristive Crossbar Array -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter -
dc.relation.journalResearchArea Chemistry; Science & Technology - Other Topics; Materials Science; Physics -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor crossbar-arrays -
dc.subject.keywordAuthor process-in-memory -
dc.subject.keywordAuthor self-rectifying memristor -
dc.subject.keywordAuthor sneak current -
dc.subject.keywordAuthor graph algorithms -
dc.subject.keywordPlus RESISTIVE MEMORY -
dc.subject.keywordPlus NETWORKS -
dc.subject.keywordPlus SYSTEM -
dc.subject.keywordPlus RECOMMENDATION -
dc.subject.keywordPlus MODEL -

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