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우경석

Woo, Kyung Seok
Emerging Semiconductor Technology Laboratory
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dc.citation.number 8 -
dc.citation.startPage 2412549 -
dc.citation.title ADVANCED MATERIALS -
dc.citation.volume 37 -
dc.contributor.author Park, Hyungjun -
dc.contributor.author Han, Joon-Kyu -
dc.contributor.author Yim, Seongpil -
dc.contributor.author Shin, Dong Hoon -
dc.contributor.author Park, Tae Won -
dc.contributor.author Woo, Kyung Seok -
dc.contributor.author Lee, Soo Hyung -
dc.contributor.author Cho, Jae Min -
dc.contributor.author Kim, Hyun Wook -
dc.contributor.author Park, Taegyun -
dc.contributor.author Hwang, Cheol Seong -
dc.date.accessioned 2025-08-06T17:30:00Z -
dc.date.available 2025-08-06T17:30:00Z -
dc.date.created 2025-08-06 -
dc.date.issued 2025-02 -
dc.description.abstract Advancements in artificial intelligence (AI) and big data have highlighted the limitations of traditional von Neumann architectures, such as excessive power consumption and limited performance improvement with increasing parameter numbers. These challenges are significant for edge devices requiring higher energy and area efficiency. Recently, many reports on memristor-based neural networks (Mem-NN) using resistive switching memory have shown efficient computing performance with a low power requirement. Even further performance optimization can be made using engineering resistive switching mechanisms. Nevertheless, systematic reviews that address the circuit-to-material aspects of Mem-NNs, including their dedicated algorithms, remain limited. This review first categorizes the memristor-based neural networks into three components: pre-processing units, processing units, and learning algorithms. Then, the optimization methods to improve integration and operational reliability are discussed across materials, devices, circuits, and algorithms for each component. Furthermore, the review compares recent advancements in chip-level neuromorphic hardware with conventional systems, including graphic processing units. The ongoing challenges and future directions in the field are discussed, highlighting the research to enhance the functionality and reliability of Mem-NNs. -
dc.identifier.bibliographicCitation ADVANCED MATERIALS, v.37, no.8, pp.2412549 -
dc.identifier.doi 10.1002/adma.202412549 -
dc.identifier.issn 0935-9648 -
dc.identifier.scopusid 2-s2.0-85214679411 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/87680 -
dc.identifier.wosid 001394989900001 -
dc.language 영어 -
dc.publisher WILEY-V C H VERLAG GMBH -
dc.title An Analysis of Components and Enhancement Strategies for Advancing Memristive Neural Networks -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter -
dc.relation.journalResearchArea Chemistry; Science & Technology - Other Topics; Materials Science; Physics -
dc.type.docType Review -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor enhancement strategies -
dc.subject.keywordAuthor key performance metrics -
dc.subject.keywordAuthor memristors -
dc.subject.keywordAuthor neural networks -
dc.subject.keywordAuthor neuromorphic chips -
dc.subject.keywordPlus DYNAMIC MEMRISTOR -
dc.subject.keywordPlus EFFICIENT -
dc.subject.keywordPlus IMPLEMENTATION -
dc.subject.keywordPlus SYNAPSES -
dc.subject.keywordPlus HARDWARE -
dc.subject.keywordPlus DEVICES -
dc.subject.keywordPlus SYSTEM -
dc.subject.keywordPlus RESISTIVE MEMORY -
dc.subject.keywordPlus IN-MEMORY -
dc.subject.keywordPlus ARTIFICIAL NEURON -

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