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김진영

Kim, Jin Young
Next Generation Energy Lab.
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dc.citation.number 6 -
dc.citation.startPage 2400902 -
dc.citation.title SOLAR RRL -
dc.citation.volume 9 -
dc.contributor.author Park, Sujung -
dc.contributor.author Wibowo, Febrian Tri Adhi -
dc.contributor.author Kim, Dohui -
dc.contributor.author Roe, Jina -
dc.contributor.author Lee, Jin Hee -
dc.contributor.author Seo, Jung Hwa -
dc.contributor.author Kim, Jin Young -
dc.contributor.author Jang, Sung-Yeon -
dc.contributor.author Cho, Shinuk -
dc.date.accessioned 2025-04-25T15:07:32Z -
dc.date.available 2025-04-25T15:07:32Z -
dc.date.created 2025-04-04 -
dc.date.issued 2025-03 -
dc.description.abstract The widely used ZnO electron transport layer in inverted nonfullerene organic solar cells (nf-OSCs) offers advantages such as excellent electron mobility and optical transparency. However, challenges arise from surface defects in solution-processed ZnO, where oxygen-containing defects can penetrate the photoactive layer, leading to photocatalytic reactions with nonfullerene acceptors under UV light, thereby compromising device stability. Another challenge is that most recent high-efficiency nf-OSCs employ conventional structures, while inverted structures exhibit comparatively lower performance. To develop stable and high-performance inverted nf-OSCs, interface modification is essential to mitigate photocatalytic issues and enhance the relatively lower power conversion efficiency (PCE). To overcome these limitations, we introduce bathophenanthroline (BPhen) doped with Cs2CO3. The BPhen:Cs2CO3 layer creates suitable energy levels, enhancing electron transport and reducing charge recombination. This approach significantly improves current density and fill factor, resulting in a notable enhancement in the PCE of pristine ZnO devices from 15.54% to 17.09% in PM6:Y6 inverted nf-OSCs. Furthermore, ZnO/BPhen:Cs2CO3 devices exhibit excellent stability, retaining ~83% of their initial efficiency even after 1000 h without encapsulation, showcasing superior stability compared to pristine ZnO-based devices. -
dc.identifier.bibliographicCitation SOLAR RRL, v.9, no.6, pp.2400902 -
dc.identifier.doi 10.1002/solr.202400902 -
dc.identifier.issn 2367-198X -
dc.identifier.scopusid 2-s2.0-105001084894 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/86681 -
dc.identifier.wosid 001450475700005 -
dc.language 영어 -
dc.publisher WILEY-V C H VERLAG GMBH -
dc.title Interface Engineering with BPhen:Cs2CO3 for High-Performance and Stable Inverted Nonfullerene Organic Solar Cells -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Energy & Fuels; Materials Science, Multidisciplinary -
dc.relation.journalResearchArea Energy & Fuels; Materials Science -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor inverted organic solar cells -
dc.subject.keywordAuthor ZnO electron transport layer -
dc.subject.keywordAuthor device stability -
dc.subject.keywordAuthor interfacial layer -
dc.subject.keywordPlus EFFICIENT -
dc.subject.keywordPlus ZNO -
dc.subject.keywordPlus HETEROJUNCTION -
dc.subject.keywordPlus RECOMBINATION -
dc.subject.keywordPlus NONGEMINATE -
dc.subject.keywordPlus STABILITY -
dc.subject.keywordPlus LIFETIME -
dc.subject.keywordPlus ELECTRON-TRANSPORT LAYER -
dc.subject.keywordPlus CONJUGATED POLYELECTROLYTE -

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