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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices Lab.
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dc.citation.number 21 -
dc.citation.startPage 2418669 -
dc.citation.title ADVANCED MATERIALS -
dc.citation.volume 37 -
dc.contributor.author Lee, Minyoung -
dc.contributor.author Kim, Changho -
dc.contributor.author Kwon, Soon-Yong -
dc.contributor.author Lee, Kayoung -
dc.contributor.author Kwak, Giyoon -
dc.contributor.author Lim, Hyunseob -
dc.contributor.author Seol, Jae Hun -
dc.date.accessioned 2025-04-25T15:06:07Z -
dc.date.available 2025-04-25T15:06:07Z -
dc.date.created 2025-04-16 -
dc.date.issued 2025-05 -
dc.description.abstract 2D materials have garnered considerable attention due to their distinctive properties, prompting diverse applications across various domains. Beyond their inherent qualities, the significance of 2D materials extends into the fabrication processes that can lead to the degradation of intrinsic performance through undesirable mechanical defects and surface contaminations. Herein, a novel fabrication technique to achieve residue-free 2D materials using van der Waals (vdW) interactions, primarily employing molybdenum disulfide (MoS2) is proposed. Optical and electrical characterizations confirm the absence of residues, mechanical defects, oxidation, and strain, along with a prominent field-effect mobility of up to 60 cm(2) V-1 s(-1) and an on/off ratio of approximate to 10(8). Furthermore, the utilization of residue-free material as a stamp enables various manipulations of flakes transferred on substrates in advance, including pick-up and release, stacking, exfoliation, wiping-out, flipping, and smoothing-out processes. Additionally, the manipulation techniques also facilitate the fabrication of vdW heterostructures with precise positioning and the desired stacking order. In this regard, the feasibility of applying this method to hexagonal boron nitride and graphite is demonstrated. It is expected that this method will offer a versatile and effective approach to enhancing the qualities of 2D material-based electronic and optoelectronic devices. -
dc.identifier.bibliographicCitation ADVANCED MATERIALS, v.37, no.21, pp.2418669 -
dc.identifier.doi 10.1002/adma.202418669 -
dc.identifier.issn 0935-9648 -
dc.identifier.scopusid 2-s2.0-105001987086 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/86638 -
dc.identifier.wosid 001458113600001 -
dc.language 영어 -
dc.publisher WILEY-V C H VERLAG GMBH -
dc.title Residue-Free Fabrication of 2D Materials Using van der Waals Interactions -
dc.type Article -
dc.description.isOpenAccess TRUE -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter -
dc.relation.journalResearchArea Chemistry; Science & Technology - Other Topics; Materials Science; Physics -
dc.type.docType Article; Early Access -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor residue-free fabrication -
dc.subject.keywordAuthor 2D materials -
dc.subject.keywordAuthor van der Waals interactions -
dc.subject.keywordAuthor manipulation -
dc.subject.keywordAuthor heterostructure -
dc.subject.keywordPlus TRANSPORT-PROPERTIES -
dc.subject.keywordPlus BILAYER MOS2 -
dc.subject.keywordPlus H-BN -
dc.subject.keywordPlus RAMAN -
dc.subject.keywordPlus CONTACT -
dc.subject.keywordPlus GRAPHENE -
dc.subject.keywordPlus GROWTH -
dc.subject.keywordPlus MONOLAYER MOS2 -

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