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Park, Noejung
Computational Physics & Electronic Structure Lab
Research Interests
  • Electronic structure calculation, computational physics, computational material science


Oxygen-induced p-type doping of a long individual single-walled carbon nanotube

DC Field Value Language Kang, D ko Park, Noejung ko Ko, JH ko Bae, E ko Park, W ko 2014-11-11T00:16:26Z - 2014-11-10 ko 2005-08 -
dc.identifier.citation NANOTECHNOLOGY, v.16, no.8, pp.1048 - 1052 ko
dc.identifier.issn 0957-4484 ko
dc.identifier.uri -
dc.identifier.uri ko
dc.description.abstract The effect of oxygen adsorption on a nanotube-based field effect transistor have been controversial as to whether it induces p-type doping of the nanotube body or the work function increase in the metal electrode. Here we report a transport measurement showing that a long individual single-walled nanotube can be doped as p-type upon oxygen adsorption. We discuss that, despite the fact that the charge transfer between the nanotube and O2 adsorbator has not been agreed to date, the effect of oxygen adsorption should still be interpreted as inducing p-type doping in the nanotube body. The n-type doping by NH3 adsorption is also measured for the purpose of comparison. Based on these observations, we suggest that, while the Schottky barrier management could be more effective for the transistor with a short nanotube, the doping effect could be more influential in devices with longer nanotubes. ko
dc.description.statementofresponsibility close -
dc.language ENG ko
dc.publisher IOP PUBLISHING LTD ko
dc.subject TOTAL-ENERGY ko
dc.subject ADSORPTION ko
dc.subject TRANSPORT ko
dc.title Oxygen-induced p-type doping of a long individual single-walled carbon nanotube ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-21144450757 ko
dc.identifier.wosid 000231410600008 ko
dc.type.rims ART ko
dc.description.wostc 57 *
dc.description.scopustc 60 * 2015-05-06 * 2014-11-10 *
dc.identifier.doi 10.1088/0957-4484/16/8/008 ko
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