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Park, Noejung
Computational Physics & Electronic Structure Lab
Research Interests
  • Electronic structure calculation, computational physics, computational material science


Effects of encapsulated metallofullerene on the Fermi level alignment at the metal-nanotube interface

DC Field Value Language Sung, Dongchul ko Park, Noejung ko 2014-11-11T00:16:14Z - 2014-11-10 ko 2007-03 -
dc.identifier.citation JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.3, pp.708 - 711 ko
dc.identifier.issn 0374-4884 ko
dc.identifier.uri -
dc.identifier.uri ko
dc.description.abstract We perform ab initio electronic structure calculations for the metal-carbon nanotube (CNT) interfaces with encapsulated fullerenes (C82) or metallofullerenes (La@C82). Gold and aluminum layers are chosen as typical examples of metals with a large work function and a small work function, respectively. It is found that the encapsulation of the fullerene species can affect the Schottky barrier height at the metal-CNT interface. We show that the fullerene-derived localized state could weakly pin the metal Fermi level in the gap of the nanotube. We suggest that the transport properties of the metallofullerene-encapsulated CNT should be explained in terms of the Schottky barrier adjustment rather than the band gap reduction model whose validity has been debated in recent publications. ko
dc.description.statementofresponsibility close -
dc.language ENG ko
dc.publisher KOREAN PHYSICAL SOC ko
dc.subject Carbon nanotube ko
dc.subject Fullerene ko
dc.subject Nanoelectronics ko
dc.subject Schottky barrier ko
dc.subject Transistor ko
dc.title Effects of encapsulated metallofullerene on the Fermi level alignment at the metal-nanotube interface ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-34147154086 ko
dc.identifier.wosid 000244988500034 ko
dc.type.rims ART ko
dc.description.wostc 4 *
dc.description.scopustc 4 * 2015-05-06 * 2014-11-10 *
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