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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 711 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 708 | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 50 | - |
dc.contributor.author | Sung, Dongchul | - |
dc.contributor.author | Park, Noejung | - |
dc.date.accessioned | 2023-12-22T09:36:30Z | - |
dc.date.available | 2023-12-22T09:36:30Z | - |
dc.date.created | 2014-11-10 | - |
dc.date.issued | 2007-03 | - |
dc.description.abstract | We perform ab initio electronic structure calculations for the metal-carbon nanotube (CNT) interfaces with encapsulated fullerenes (C82) or metallofullerenes (La@C82). Gold and aluminum layers are chosen as typical examples of metals with a large work function and a small work function, respectively. It is found that the encapsulation of the fullerene species can affect the Schottky barrier height at the metal-CNT interface. We show that the fullerene-derived localized state could weakly pin the metal Fermi level in the gap of the nanotube. We suggest that the transport properties of the metallofullerene-encapsulated CNT should be explained in terms of the Schottky barrier adjustment rather than the band gap reduction model whose validity has been debated in recent publications. | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.3, pp.708 - 711 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.scopusid | 2-s2.0-34147154086 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/8552 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=34147154086 | - |
dc.identifier.wosid | 000244988500034 | - |
dc.language | 영어 | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Effects of encapsulated metallofullerene on the Fermi level alignment at the metal-nanotube interface | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | carbon nanotube | - |
dc.subject.keywordAuthor | fullerene | - |
dc.subject.keywordAuthor | transistor | - |
dc.subject.keywordAuthor | Schottky barrier | - |
dc.subject.keywordAuthor | nanoelectronics | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | WALLED CARBON NANOTUBES | - |
dc.subject.keywordPlus | ULTRASOFT PSEUDOPOTENTIALS |
- |
dc.subject.keywordPlus | TRANSPORT | - |
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