Effects of encapsulated metallofullerene on the Fermi level alignment at the metal-nanotube interface
Cited 4 times inCited 4 times in
- Effects of encapsulated metallofullerene on the Fermi level alignment at the metal-nanotube interface
- Sung, Dongchul; Park, Noejung
- Carbon nanotube; Fullerene; Nanoelectronics; Schottky barrier; Transistor
- Issue Date
- KOREAN PHYSICAL SOC
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.3, pp.708 - 711
- We perform ab initio electronic structure calculations for the metal-carbon nanotube (CNT) interfaces with encapsulated fullerenes (C82) or metallofullerenes (La@C82). Gold and aluminum layers are chosen as typical examples of metals with a large work function and a small work function, respectively. It is found that the encapsulation of the fullerene species can affect the Schottky barrier height at the metal-CNT interface. We show that the fullerene-derived localized state could weakly pin the metal Fermi level in the gap of the nanotube. We suggest that the transport properties of the metallofullerene-encapsulated CNT should be explained in terms of the Schottky barrier adjustment rather than the band gap reduction model whose validity has been debated in recent publications.
- ; Go to Link
- Appears in Collections:
- PHY_Journal Papers
- Files in This Item:
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.