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Yoon, Tae-Sik
Nano Semiconductor Research Lab.
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Charge-Trap Memory Characteristics in MOS Capacitors with Oxygen Deficient and Nitrogen-Doped Tantalum Oxide as a Charge-Trap Layer

Author(s)
Park, Jae-GwanYoon, Tae-Sik
Issued Date
2024-12-12
URI
https://scholarworks.unist.ac.kr/handle/201301/85397
Citation
SISC 2024
Publisher
IEEE

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