File Download

There are no files associated with this item.

  • Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
Related Researcher

윤태식

Yoon, Tae-Sik
Nano Semiconductor Research Lab.
Read More

Views & Downloads

Detailed Information

Cited time in webofscience Cited time in scopus
Metadata Downloads

Non-Volatile Charge-Trap Flash Memory Characteristics with the ZnO Channel Layer and Low-Temperature Atomic Layer Deposited HfO2-x Charge-Trap Layer

Author(s)
Noh, TaeyunYoon, Tae-Sik
Issued Date
2024-11-27
URI
https://scholarworks.unist.ac.kr/handle/201301/85385
Citation
ENGE 2024
Publisher
대한금속재료학회

qrcode

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.