Synthesis of p-Type II-IV-N2 Ternary Nitride by Group III Doping via Modified Chemical Vapor Deposition Method

Abstract

Zinc tin nitride (ZTN) stands out due to its abundant, low cost and low toxic compound, offering excellent optoelectronic properties as an alternative to binary III nitride. Recently, research interest focusing on n-type to p-type conversion of ZTN has been increasing for scalability of the material’s applications. However, thermodynamic research has indicated that p-type doping of ZTN is challenging. Nevertheless, recent studies show the potential for p-type conversion, similar to the successful conver- sion of GaN to p-type. Herein, we synthesized amorphous p-type Al and Ga-doped ZTN thin films. Herein, we employed pulsed plasma-enhanced chemical vapour deposition (pulsed_PECVD) method to synthesize amor- phous p-type Al and Ga-doped ZTN thin films. As a result, Al and Ga concentration of deposited thin films are varied from 4 to 20 %. Moreover, Hall-effect measurement studies revealed that the type of conduction is converted from n-type to p-type with hole concentration in the range of 1013 ~ 1018 cm-3. UV-Vis was conducted to investigate the optical properties such as band gap. Additionally, band struc- ture was constructed with work function and Fermi level obtained from UPS according to dopant con- centration. Finally, I-V and CV characteristics of p-n homojunction device composed of n-ZTN and p- ZTN films with various Al and Ga concentration was explored.