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안광진

An, Kwangjin
Advanced Nanocatalysis Lab.
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dc.citation.startPage 139545 -
dc.citation.title JOURNAL OF MOLECULAR STRUCTURE -
dc.citation.volume 1319 -
dc.contributor.author Seo, Jae-Won -
dc.contributor.author Pophali, Amol -
dc.contributor.author An, Seongwoo -
dc.contributor.author Liang, Chi Seng Lee -
dc.contributor.author Li, Sihan -
dc.contributor.author Liu, Henry -
dc.contributor.author Kim, Jihun -
dc.contributor.author An, Kwangjin -
dc.contributor.author Kim, Jaewoo -
dc.contributor.author Kim, Taejin -
dc.date.accessioned 2024-08-28T10:05:05Z -
dc.date.available 2024-08-28T10:05:05Z -
dc.date.created 2024-08-27 -
dc.date.issued 2025-01 -
dc.description.abstract The molecular structure stability at low and high temperature is important for an industrial application. The boron nitride-based materials, such as hexagonal boron nitride (h-BN) and boron nitride nanotubes (BNNTs), have been interested due to their high oxidation resistance and thermal stability. In this study, ex-situ and in-situ characterization techniques (e.g., Raman spectroscopy, X-ray Diffraction (XRD), and Fourier-transform infrared spectroscopy (FTIR)) were applied to investigate the structural change of BNNT and h-BN at high (up to 800 degrees C) and low (down to-50 degrees C) temperatures. The Raman spectroscopy results showed that at high temperatures (800 degrees C), h-BN exhibited a significant red shift under both inert and oxidizing conditions, while BNNT showed no peak shift, indicating its more stable structural resistance compared to h-BN. Both h-BN and BNNT showed no peak shift after cooling to low temperatures (-50 degrees C). Stability of h-BN and BNNT up to a high temperature of 800 degrees C was revealed from the thermogravimetric analysis (TGA) and FTIR spectroscopy results. The FTIR results also indicate that under oxidizing conditions, heating h-BN results in the formation of more hydroxyl groups compared to BNNT. The in-situ XRD results showed a greater magnitude of lower 2 theta theta shift with increasing temperatures for h-BN compared to BNNT. Additionally, there was a more significant increase in FWHM values with respect to temperatures for h-BN than BNNT regardless of the sample under inert or oxidizing conditions. The characterization results from this study indicate that BN-based materials, especially BNNT, are suitable candidates for high temperature chemical reaction applications. -
dc.identifier.bibliographicCitation JOURNAL OF MOLECULAR STRUCTURE, v.1319, pp.139545 -
dc.identifier.doi 10.1016/j.molstruc.2024.139545 -
dc.identifier.issn 0022-2860 -
dc.identifier.scopusid 2-s2.0-85200645667 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/83571 -
dc.identifier.wosid 001291285300001 -
dc.language 영어 -
dc.publisher ELSEVIER -
dc.title Fundamental structural study of hexagonal boron nitride (h-BN) and boron nitride nanotube (BNNT) at low and high temperatures -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Chemistry, Physical -
dc.relation.journalResearchArea Chemistry -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor Low-high temperatures -
dc.subject.keywordAuthor Boron nitride nanotubes (BNNTs) -
dc.subject.keywordAuthor Hexagonal boron nitride (h-BN) -
dc.subject.keywordAuthor In-situ spectroscopy -
dc.subject.keywordPlus COVALENT FUNCTIONALIZATION -
dc.subject.keywordPlus THERMAL-CONDUCTIVITY -
dc.subject.keywordPlus RAMAN-SPECTROSCOPY -
dc.subject.keywordPlus HIGH-PERFORMANCE -
dc.subject.keywordPlus DISPERSION -
dc.subject.keywordPlus GRAPHENE -
dc.subject.keywordPlus NANOCOMPOSITES -
dc.subject.keywordPlus REDUCTION -
dc.subject.keywordPlus STRENGTH -
dc.subject.keywordPlus ELECTRICAL-PROPERTIES -

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