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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 652 | - |
dc.citation.number | 6593 | - |
dc.citation.startPage | 648 | - |
dc.citation.title | SCIENCE | - |
dc.citation.volume | 376 | - |
dc.contributor.author | Cheema, Suraj S. | - |
dc.contributor.author | Shanker, Nirmaan | - |
dc.contributor.author | Hsu, Shang-Lin | - |
dc.contributor.author | Rho, Yoonsoo | - |
dc.contributor.author | Hsu, Cheng-Hsiang | - |
dc.contributor.author | Stoica, Vladimir A. | - |
dc.contributor.author | Zhang, Zhan | - |
dc.contributor.author | Freeland, John W. | - |
dc.contributor.author | Shafer, Padraic | - |
dc.contributor.author | Grigoropoulos, Costas P. | - |
dc.contributor.author | Ciston, Jim | - |
dc.contributor.author | Salahuddin, Sayeef | - |
dc.date.accessioned | 2024-08-02T11:35:13Z | - |
dc.date.available | 2024-08-02T11:35:13Z | - |
dc.date.created | 2024-08-02 | - |
dc.date.issued | 2022-05 | - |
dc.description.abstract | The critical size limit of voltage-switchable electric dipoles has extensive implications for energy-efficient electronics, underlying the importance of ferroelectric order stabilized at reduced dimensionality. We report on the thickness-dependent antiferroelectric-to-ferroelectric phase transition in zirconium dioxide (ZrO2) thin films on silicon. The emergent ferroelectricity and hysteretic polarization switching in ultrathin ZrO2, conventionally a paraelectric material, notably persists down to a film thickness of 5 angstroms, the fluorite-structure unit-cell size. This approach to exploit three-dimensional centrosymmetric materials deposited down to the two-dimensional thickness limit, particularly within this model fluorite-structure system that possesses unconventional ferroelectric size effects, offers substantial promise for electronics, demonstrated by proof-of-principle atomic-scale nonvolatile ferroelectric memory on silicon. Additionally, it is also indicative of hidden electronic phenomena that are achievable across a wide class of simple binary materials. | - |
dc.identifier.bibliographicCitation | SCIENCE, v.376, no.6593, pp.648 - 652 | - |
dc.identifier.doi | 10.1126/science.abm8642 | - |
dc.identifier.issn | 0036-8075 | - |
dc.identifier.scopusid | 2-s2.0-85129372001 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/83373 | - |
dc.identifier.wosid | 000796932700047 | - |
dc.language | 영어 | - |
dc.publisher | AMER ASSOC ADVANCEMENT SCIENCE | - |
dc.title | Emergent ferroelectricity in subnanometer binary oxide films on silicon | - |
dc.type | Article | - |
dc.description.isOpenAccess | TRUE | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE FERROELECTRICITY | - |
dc.subject.keywordPlus | ORIGIN | - |
dc.subject.keywordPlus | OXYGEN | - |
dc.subject.keywordPlus | PHASE | - |
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