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Kwon, Jimin
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dc.citation.endPage 317 -
dc.citation.number 6693 -
dc.citation.startPage 312 -
dc.citation.title SCIENCE -
dc.citation.volume 384 -
dc.contributor.author Han, Sangmoon -
dc.contributor.author Kim, Justin S. -
dc.contributor.author Park, Eugene -
dc.contributor.author Meng, Yuan -
dc.contributor.author Xu, Zhihao -
dc.contributor.author Foucher, Alexandre C. -
dc.contributor.author Jung, Gwan Yeong -
dc.contributor.author Roh, Ilpyo -
dc.contributor.author Lee, Sangho -
dc.contributor.author Kim, Sun Ok -
dc.contributor.author Moon, Ji-Yun -
dc.contributor.author Kim, Seung-Il -
dc.contributor.author Bae, Sanggeun -
dc.contributor.author Zhang, Xinyuan -
dc.contributor.author Park, Bo-In -
dc.contributor.author Seo, Seunghwan -
dc.contributor.author Li, Yimeng -
dc.contributor.author Shin, Heechang -
dc.contributor.author Reidy, Kate -
dc.contributor.author Hoang, Anh Tuan -
dc.contributor.author Sundaram, Suresh -
dc.contributor.author Vuong, Phuong -
dc.contributor.author Kim, Chansoo -
dc.contributor.author Zhao, Junyi -
dc.contributor.author Hwang, Jinyeon -
dc.contributor.author Wang, Chuan -
dc.contributor.author Choi, Hyungil -
dc.contributor.author Kim, Dong-Hwan -
dc.contributor.author Kwon, Jimin -
dc.contributor.author Park, Jin-Hong -
dc.contributor.author Ougazzaden, Abdallah -
dc.contributor.author Lee, Jae-Hyun -
dc.contributor.author Ahn, Jong-Hyun -
dc.contributor.author Kim, Jeehwan -
dc.contributor.author Mishra, Rohan -
dc.contributor.author Kim, Hyung-Seok -
dc.contributor.author Ross, Frances M. -
dc.contributor.author Bae, Sang-Hoon -
dc.date.accessioned 2024-07-18T09:35:07Z -
dc.date.available 2024-07-18T09:35:07Z -
dc.date.created 2024-07-18 -
dc.date.issued 2024-04 -
dc.description.abstract Electrostatic capacitors are foundational components of advanced electronics and high-power electrical systems owing to their ultrafast charging-discharging capability. Ferroelectric materials offer high maximum polarization, but high remnant polarization has hindered their effective deployment in energy storage applications. Previous methodologies have encountered problems because of the deteriorated crystallinity of the ferroelectric materials. We introduce an approach to control the relaxation time using two-dimensional (2D) materials while minimizing energy loss by using 2D/3D/2D heterostructures and preserving the crystallinity of ferroelectric 3D materials. Using this approach, we were able to achieve an energy density of 191.7 joules per cubic centimeter with an efficiency greater than 90%. This precise control over relaxation time holds promise for a wide array of applications and has the potential to accelerate the development of highly efficient energy storage systems. -
dc.identifier.bibliographicCitation SCIENCE, v.384, no.6693, pp.312 - 317 -
dc.identifier.doi 10.1126/science.adl2835 -
dc.identifier.issn 0036-8075 -
dc.identifier.scopusid 2-s2.0-85191631784 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/83199 -
dc.identifier.wosid 001253002600031 -
dc.language 영어 -
dc.publisher AMER ASSOC ADVANCEMENT SCIENCE -
dc.title High energy density in artificial heterostructures through relaxation time modulation -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Multidisciplinary Sciences -
dc.relation.journalResearchArea Science & Technology - Other Topics -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus DIELECTRIC-PROPERTIES -
dc.subject.keywordPlus INTERFACE -
dc.subject.keywordPlus STORAGE PERFORMANCE -
dc.subject.keywordPlus THIN-FILMS -
dc.subject.keywordPlus LAYER -
dc.subject.keywordPlus INTEGRATION -
dc.subject.keywordPlus CAPACITORS -
dc.subject.keywordPlus EFFICIENCY -

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