There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.startPage | 104014 | - |
dc.citation.title | SURFACES AND INTERFACES | - |
dc.citation.volume | 46 | - |
dc.contributor.author | Ansari, Mohd Zahid | - |
dc.contributor.author | Janicek, Petr | - |
dc.contributor.author | Namgung, Sook | - |
dc.contributor.author | Kim, Hyangil | - |
dc.contributor.author | Nandi, Dip K. | - |
dc.contributor.author | Cheon, Taehoon | - |
dc.contributor.author | Siddiqui, Masoom Raza | - |
dc.contributor.author | Imran, Muhammad | - |
dc.contributor.author | Jang, Yujin | - |
dc.contributor.author | Bae, Jong-Seong | - |
dc.contributor.author | Hong, Tae Eun | - |
dc.contributor.author | Park, Chaehyun | - |
dc.contributor.author | Son, Yeseul | - |
dc.contributor.author | Kim, Sang Bok | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.date.accessioned | 2024-04-11T10:35:11Z | - |
dc.date.available | 2024-04-11T10:35:11Z | - |
dc.date.created | 2024-04-09 | - |
dc.date.issued | 2024-03 | - |
dc.description.abstract | This study presents the deposition of zirconium oxide (ZrO2) thin films through atomic layer deposition (ALD) using a novel Zr precursor, tris(dimethylamido) dimethylamidoboratabenzene zirconium [eta(6):eta(1)-(C5H5BNMe2)Zr(IV)(NMe2)(3)] and O-2 reactant on SiO2/Si substrate in a range of 150-350 degrees C. The successful growth of highly conformal and amorphous ZrO2 films was possible using O-2 as a mild oxygen source, which has rarely been found in ZrO2 ALD. This newly proposed process displayed distinct ALD characteristics, including self-limiting film growth and a linear relationship between the number of ALD cycles and film thickness, and exhibited enhanced deposition temperature window and growth per cycle of 0.87 & Aring;, which is higher than those using several previously reported Zr precursors. Extremely conformal film growth with complete step coverage on trenches [aspect ratio of similar to 6.3] and uniformity on a 15 cm large SiO2/Si wafer was realized, which is one of the main highlights. Structural studies reveal a predominant amorphous nature of the as-deposited films and transition into nanocrystalline cubic ZrO2 films annealed at 850 degrees C with improved film properties such as stoichiometry, reduced impurities, which is confirmed by Rutherford backscattering spectrometry, X-ray diffraction, X-ray photoelectron spectroscopy, elastic recoil detection, and secondary ion mass spectrometry analyses. The optical properties of the prepared films were also examined via ellipsometry analysis. | - |
dc.identifier.bibliographicCitation | SURFACES AND INTERFACES, v.46, pp.104014 | - |
dc.identifier.doi | 10.1016/j.surfin.2024.104014 | - |
dc.identifier.issn | 2468-0230 | - |
dc.identifier.scopusid | 2-s2.0-85185157789 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/81972 | - |
dc.identifier.wosid | 001183264500001 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER | - |
dc.title | New class of Zr precursor containing boratabenzene ligand enabling highly conformal wafer-scale zirconium dioxide thin films through atomic layer deposition | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Novel precursor | - |
dc.subject.keywordAuthor | ZrO2 | - |
dc.subject.keywordAuthor | Wafer-scale growth | - |
dc.subject.keywordAuthor | Post annealing | - |
dc.subject.keywordAuthor | Ellipsometry analysis | - |
dc.subject.keywordPlus | CYCLOPENTADIENYL PRECURSORS | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | ALD PRECURSOR | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | HAFNIUM | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | SUBSTITUTION | - |
dc.subject.keywordPlus | COMPLEXES | - |
dc.subject.keywordPlus | EPITAXY | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.