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DC Field | Value | Language |
---|---|---|
dc.citation.number | 4 | - |
dc.citation.startPage | 04LT01 | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 39 | - |
dc.contributor.author | Park, Hyunjin | - |
dc.contributor.author | Kwon, Jimin | - |
dc.contributor.author | Seo, Jihyung | - |
dc.contributor.author | Kim, Kiho | - |
dc.contributor.author | Kim, Yun Ho | - |
dc.contributor.author | Jung, Sungjune | - |
dc.date.accessioned | 2024-04-11T10:35:10Z | - |
dc.date.available | 2024-04-11T10:35:10Z | - |
dc.date.created | 2024-04-09 | - |
dc.date.issued | 2024-04 | - |
dc.description.abstract | In this work, a fully flexible graphene field-effect transistor with high carrier mobility is reported. Patterned high-quality and uniform single-layer graphene films are successfully realized by combining the selective growth on a patterned copper foil and the direct transfer method to minimize degradation factors. The selectively grown single-layer graphene is directly transferred to the target substrate through the deposition of poly-para-xylylene (Parylene) C. The quality of the graphene films is confirmed by Raman spectroscopy. The analysis reveals that the use of Parylene C as the substrate, gate dielectric, and encapsulation layer has the advantage of reducing the scattering by the optical phonons and charge puddles. The estimated residual carrier density is 1.72 x 1011 cm-2, and the intrinsic hole and electron carrier mobilities are found to be as high as 10 260 and 10 010 cm2 V-1 s-1, respectively. This study can pave the way for the development and mass production of high-performance and fully flexible graphene electronics. | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.39, no.4, pp.04LT01 | - |
dc.identifier.doi | 10.1088/1361-6641/ad3111 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.scopusid | 2-s2.0-85187621798 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/81968 | - |
dc.identifier.wosid | 001184109200001 | - |
dc.language | 영어 | - |
dc.publisher | IOP Publishing Ltd | - |
dc.title | Flexible field-effect transistors with high-quality and uniform single-layer graphene for high mobility | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Engineering; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | flexible | - |
dc.subject.keywordAuthor | parylene | - |
dc.subject.keywordAuthor | direct transfer | - |
dc.subject.keywordAuthor | selective growth | - |
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