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DC Field | Value | Language |
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dc.citation.startPage | 2312365 | - |
dc.citation.title | ADVANCED FUNCTIONAL MATERIALS | - |
dc.contributor.author | Kim, Tae Soo | - |
dc.contributor.author | Noh, Gichang | - |
dc.contributor.author | Kwon, Seongdae | - |
dc.contributor.author | Kim, Ji Yoon | - |
dc.contributor.author | Dhakal, Krishna P. | - |
dc.contributor.author | Oh, Saeyoung | - |
dc.contributor.author | Chai, Hyun-Jun | - |
dc.contributor.author | Park, Eunpyo | - |
dc.contributor.author | Kim, In Soo | - |
dc.contributor.author | Lee, Eunji | - |
dc.contributor.author | Kim, Youngbum | - |
dc.contributor.author | Lee, Jaehyun | - |
dc.contributor.author | Jo, Min-kyung | - |
dc.contributor.author | Kang, Minsoo | - |
dc.contributor.author | Park, Cheolmin | - |
dc.contributor.author | Kim, Jeongho | - |
dc.contributor.author | Park, Jeongwon | - |
dc.contributor.author | Kim, Suhyun | - |
dc.contributor.author | Kim, Mingyu | - |
dc.contributor.author | Kim, Yuseok | - |
dc.contributor.author | Choi, Sung-Yool | - |
dc.contributor.author | Song, Seungwoo | - |
dc.contributor.author | Jeong, Hu Young | - |
dc.contributor.author | Kim, Jeongyong | - |
dc.contributor.author | Kwak, Joon Young | - |
dc.contributor.author | Kang, Kibum | - |
dc.date.accessioned | 2024-03-13T14:05:12Z | - |
dc.date.available | 2024-03-13T14:05:12Z | - |
dc.date.created | 2024-03-11 | - |
dc.date.issued | 2024-02 | - |
dc.description.abstract | 2D MoS2 has gained attention for the post-silicon material owing to its atomically thin nature and dangling bond-free surface. The bi-layer MoS2 is considered a promising material for electronic devices due to its better electrical properties than monolayer MoS2. However, the uniform growth of bi-layer MoS2 is still challenging. Herein, the uniform growth of bi-layer MoS2 is demonstrated using gas-phase alkali metal-assisted metal-organic chemical vapor deposition (GAA-MOCVD). Thanks to enhanced metal reactant diffusion length in GAA-MOCVD, the uniform growth of bi-layer MoS2 film is achieved even at fast nucleation kinetics for a shorter growth time compared to previously reported MOCVD. The bi-layer MoS2 field-effect transistors (FETs) show superior electrical properties such as sheet conductance and electron mobility than monolayer MoS2 FETs. The electron mobility of bi-layer MoS2 FETs with bismuth contacts reaches a maximum of 92.35 cm(2) V-1 s(-1). Using the partially grown epitaxial bi-layer (PGEB) MoS2, it is demonstrated that a photodetector showed a near-infrared photoresponse with a low dark current that is advantageous for both monolayer and bi-layer applications. The potential expansion of the growth technique to layer-by-layer growth can result in boosted performance across a wide spectrum of electronic and optoelectronic devices employing MoS2. | - |
dc.identifier.bibliographicCitation | ADVANCED FUNCTIONAL MATERIALS, pp.2312365 | - |
dc.identifier.doi | 10.1002/adfm.202312365 | - |
dc.identifier.issn | 1616-301X | - |
dc.identifier.scopusid | 2-s2.0-85185135107 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/81604 | - |
dc.identifier.wosid | 001162709300001 | - |
dc.language | 영어 | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Diffusion Control on the Van der Waals Surface of Monolayers for Uniform Bi-Layer MoS2 Growth | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | 2D materials | - |
dc.subject.keywordAuthor | bi-layer growth | - |
dc.subject.keywordAuthor | gas-phase alkali metal | - |
dc.subject.keywordAuthor | metal-organic chemical vapor deposition | - |
dc.subject.keywordAuthor | transition metal dichalcogenides | - |
dc.subject.keywordPlus | TRANSITION-METAL DICHALCOGENIDES | - |
dc.subject.keywordPlus | 2-DIMENSIONAL MATERIALS | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | LAYER MOS2 | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | NUCLEATION | - |
dc.subject.keywordPlus | PHOTOTRANSISTORS | - |
dc.subject.keywordPlus | PHOTODETECTOR | - |
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