dc.citation.conferencePlace |
FR |
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dc.citation.conferencePlace |
Montpellier, France |
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dc.citation.title |
ICPS 2018 (34th International Conference on the Physics of Semiconductors) |
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dc.contributor.author |
Jung, Sungchul |
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dc.contributor.author |
Yoon, Hoon Hahn |
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dc.contributor.author |
Kim, Junhyung |
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dc.contributor.author |
Lee, Jung-Yong |
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dc.contributor.author |
Mo, Kyuhyung |
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dc.contributor.author |
Park, Kibog |
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dc.date.accessioned |
2024-02-01T01:37:55Z |
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dc.date.available |
2024-02-01T01:37:55Z |
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dc.date.created |
2019-01-05 |
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dc.date.issued |
2018-08-01 |
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dc.description.abstract |
Fluorination of graphene has been studied for patterning a graphene film without etching process by making graphene insulating in area-selective manners. Fluorinated-graphene (FG) is a promising 2-dimensional insulator because it has wide band gap and is stable at room temperature. Accordingly, the research activities for using FG as a tunnel insulator or dielectric material have been conducted in various ways. In this experiment, we fabricated a graphene/fluorinated-graphene/graphene (G/FG/G) tunnel junction along the lateral direction parallel to the substrate surface. The fabricated G/FG/G tunnel junction shows nonlinear current-voltage (I-V) characteristics similar to conventional vertical tunnel junctions. In case of small (sub-micron scale) junction widths, asymmetric I-V characteristics are observed due to the different local doping of graphene on both sides of tunnel barrier. As the junction width increases, the I-V curve becomes more symmetric since the graphene doping concentration on both sides of tunnel barrier becomes similar on average. From this tendency, the I-V characteristics of lateral G/FG/G tunnel junction can be concluded to be quite sensitive to the local doping of graphene. Differently from other vertical tunnel junctions, the lateral G/FG/G tunnel junction requires 1-dimensional model to explain its tunneling phenomenon. We constructed the 1-dimensional tunneling model and calculated the tunnel current density to compare with the 2-dimensional tunneling model for conventional vertical tunnel junctions. Our 1-dimensional tunneling model can be applied to lateral tunnel junctions made of recent 2-dimensional materials and give more accurate explanation about its physical mechanism as well. |
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dc.identifier.bibliographicCitation |
ICPS 2018 (34th International Conference on the Physics of Semiconductors) |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/81098 |
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dc.language |
영어 |
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dc.publisher |
International Union of Pure and Applied Physics (IUPAP) |
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dc.title |
Carrier Transport in Lateral Graphene/Fluorinated-Graphene/Graphene TunnelJunction Formed with Area-Selective Fluorination |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2018-07-29 |
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