MBE growth of telecommunication wavelength single photon emitters

Abstract

Long-distance quantum communication relies on the ability to efficiently generate and prepare single photons at telecom wavelengths. MBE grown single photon emitters in the telecom E-band produce indistinguishable photons in a range of configurations including photons emitted from different quantum dots that are in separate photonics structures. During growth, circular InAs quantum dots spontaneously form on InP surfaces during cooling of a planar InAs layer that is grown at an elevated temperature. Despite manipulation of the dot shape, brightness suffers at c-band wavelengths, which is evaluated using atomic resolution electron microscopy and attributed to extended defects forming in and around the larger dots. © 2018 SPIE.