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- Jeong, Changwook
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The Impact of Dislocation on Bulk -Si FinFET Technologies: Physical Modeling of Strain Relaxation and Enhancement by Dislocation
- Author(s)
- Min, Jeong Guk, Jeong, Changwook, Kwon, Uihui, Kim, Dae Sin, Kim, Suhyun, Kim, Ilryoung, Yang, Joon-Sung
- Issued Date
- 2018-10-14
- Citation
- 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)
- Abstract
- The optimal position of dislocation stress memorization technique (DSMT) to maximize n-FinFET performance as well as the stacking fault (SF) number, [Ge] concentration limit and p-FinFET DC tradeoff in eSiGe are newly investigated by using the scanning moiré fringe (SMF) and scanning transmission electron microscopy-geometrical phase analysis (STEM-GPA) validated in-house 3D TCAD model in various bulk finFET structures.
- Publisher
- IEEE
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