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DC Field | Value | Language |
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dc.citation.conferencePlace | US | - |
dc.citation.conferencePlace | San Francisco | - |
dc.citation.endPage | 22.6.4 | - |
dc.citation.startPage | 22.6.1 | - |
dc.citation.title | IEEE International Electron Devices Meeting | - |
dc.contributor.author | Ge, R. | - |
dc.contributor.author | Wu, X. | - |
dc.contributor.author | Kim, Myungsoo | - |
dc.contributor.author | Chen, P.-A. | - |
dc.contributor.author | Shi, J. | - |
dc.contributor.author | Choi, J. | - |
dc.contributor.author | Li, X. | - |
dc.contributor.author | Zhang, Y. | - |
dc.contributor.author | Chiang, M.-H. | - |
dc.contributor.author | Lee, J.C. | - |
dc.contributor.author | Akinwande, D. | - |
dc.date.accessioned | 2024-02-01T00:41:45Z | - |
dc.date.available | 2024-02-01T00:41:45Z | - |
dc.date.created | 2021-09-07 | - |
dc.date.issued | 2018-12 | - |
dc.description.abstract | Non-volatile resistive switching (NVRS) has been recently observed with synthesized monolayer molybdenum disulfide (MoS 2 ) as the active layer and termed atomristors [1]. In this paper, we demonstrate the fastest switching speed (<15 ns) among all crystalline two-dimensional (2D) related NVRS devices to the best of our knowledge. For the first time, ab-initio simulation results of atomristors elucidate the mechanism revealing favorable substitution of specific metal ions into sulfur vacancies during switching. This insight combined with area-scaling experimental studies indicate a local conductive-bridge-like nature. The proposed mechanism is further supported by sulfur annealing recovery phenomenon. Moreover, exfoliated MoS 2 monolayer is demonstrated to have memory effect for the first time, expanding the materials beyond synthesized films. State-of-the-art non-volatile RF switches based on MoS 2 atomristors were prepared, featuring 0.25 dB insertion loss, 29 dB isolation (both at 67 GHz), and 70 THz cutoff frequency, a record performance compared to emerging RF switches. Our pioneering work suggests that memory effect maybe present in dozens or 100s of 2D monolayers similar to MoS 2 paving the path for new scientific studies for understanding the rich physics, and engineering research towards diverse device applications. | - |
dc.identifier.bibliographicCitation | IEEE International Electron Devices Meeting, pp.22.6.1 - 22.6.4 | - |
dc.identifier.doi | 10.1109/IEDM.2018.8614602 | - |
dc.identifier.issn | 0163-1918 | - |
dc.identifier.scopusid | 2-s2.0-85061781038 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/80327 | - |
dc.language | 영어 | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Atomristors: Memory Effect in Atomically-thin Sheets and Record RF Switches | - |
dc.type | Conference Paper | - |
dc.date.conferenceDate | 2018-12-01 | - |
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