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DC Field | Value | Language |
---|---|---|
dc.citation.conferencePlace | US | - |
dc.citation.conferencePlace | San Jose | - |
dc.citation.title | CLEO: Applications and Technology, CLEO_AT 2019 | - |
dc.contributor.author | Ko, Young-Ho | - |
dc.contributor.author | Han, Won Seok | - |
dc.contributor.author | Kim, Kap-Joong | - |
dc.contributor.author | Choi, Byung-Seok | - |
dc.contributor.author | Kim, Kyu Young | - |
dc.contributor.author | Kim, Je-Hyung | - |
dc.contributor.author | Kim, Heeju | - |
dc.contributor.author | Jang, Yudong | - |
dc.contributor.author | Lee, Donghan | - |
dc.contributor.author | Youn, Chun Ju | - |
dc.contributor.author | Kim, Jong-Hoi | - |
dc.contributor.author | Ju, Jung Jin | - |
dc.date.accessioned | 2024-02-01T00:35:54Z | - |
dc.date.available | 2024-02-01T00:35:54Z | - |
dc.date.created | 2019-07-18 | - |
dc.date.issued | 2019-05-05 | - |
dc.description.abstract | The site-controlled quantum dot was obtained for hetero-integration of single photon emitter with silicon photonic circuit and fiber optics. By using selective-area growth method, the InAs quantum dot was formed on the InP pyramid which showed single photon emission from 1100 to 1300 nm. The hetero-integrated structure was designed as InAs quantum dot on the silicon waveguides with high coupling efficiency and fabricated by micro-transfer technique. | - |
dc.identifier.bibliographicCitation | CLEO: Applications and Technology, CLEO_AT 2019 | - |
dc.identifier.doi | 10.1364/CLEO_AT.2019.JTu2A.43 | - |
dc.identifier.issn | 0000-0000 | - |
dc.identifier.scopusid | 2-s2.0-85068126246 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/79860 | - |
dc.identifier.url | https://www.osapublishing.org/abstract.cfm?URI=CLEO_AT-2019-JTu2A.43 | - |
dc.language | 영어 | - |
dc.publisher | OSA - The Optical Society | - |
dc.title | Site-controlled InAs quantum dot for hetero-integration of single photon emitter | - |
dc.type | Conference Paper | - |
dc.date.conferenceDate | 2019-05-05 | - |
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