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Site-controlled InAs quantum dot for hetero-integration of single photon emitter
- Author(s)
- Ko, Young-Ho, Han, Won Seok, Kim, Kap-Joong, Choi, Byung-Seok, Kim, Kyu Young, Kim, Je-Hyung, Kim, Heeju, Jang, Yudong, Lee, Donghan, Youn, Chun Ju, Kim, Jong-Hoi, Ju, Jung Jin
- Issued Date
- 2019-05-05
- Citation
- CLEO: Applications and Technology, CLEO_AT 2019
- Abstract
- The site-controlled quantum dot was obtained for hetero-integration of single photon emitter with silicon photonic circuit and fiber optics. By using selective-area growth method, the InAs quantum dot was formed on the InP pyramid which showed single photon emission from 1100 to 1300 nm. The hetero-integrated structure was designed as InAs quantum dot on the silicon waveguides with high coupling efficiency and fabricated by micro-transfer technique.
- Publisher
- OSA - The Optical Society
- ISSN
- 0000-0000
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