dc.citation.conferencePlace |
JA |
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dc.citation.title |
IEEE Symposium on VLSI Circuits |
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dc.contributor.author |
Jang, E-San |
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dc.contributor.author |
Ryu, Min Woo |
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dc.contributor.author |
Patel, Ramesh |
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dc.contributor.author |
Ahn, Sang Hyo |
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dc.contributor.author |
Jeon, Hyeong Ju |
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dc.contributor.author |
Han, Ki Jin |
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dc.contributor.author |
Kim, Kyung Rok |
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dc.date.accessioned |
2024-02-01T00:09:13Z |
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dc.date.available |
2024-02-01T00:09:13Z |
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dc.date.created |
2019-07-05 |
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dc.date.issued |
2019-06-12 |
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dc.description.abstract |
We demonstrate a record-high performance monolithic trantenna (transistor-antenna) using 65-nm CMOS foundry in the field of a plasmonic terahertz (THz) detector. By applying ultimate structural asymmetry between source and drain on a ring FET with source diameter (dS) scaling from 30 to 0.38 mm, we obtained 180 times more enhanced photoresponse (Du) in on-chip THz measurement. Through free-space THz imaging experiments, the conductive drain region of ring FET itself showed a frequency sensitivity with resonance frequency at 0.12 THz in 0.09~ 0.2 THz range and polarization-independent imaging results as an isotropic circular antenna. Highlyscalable and feeding line-free monolithic trantenna enables a high-performance THz detector with responsivity of 8.8 kV/W and NEP of 3.36 pW/Hz0.5 at the target frequency. |
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dc.identifier.bibliographicCitation |
IEEE Symposium on VLSI Circuits |
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dc.identifier.doi |
10.23919/VLSIC.2019.8778116 |
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dc.identifier.scopusid |
2-s2.0-85070312618 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/79688 |
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dc.identifier.url |
https://ieeexplore.ieee.org/document/8778116 |
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dc.language |
영어 |
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dc.publisher |
2019 Symposium on VLSI Technology and Circuits |
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dc.title |
Record-High Performance Trantenna based on Asymmetric Nano-Ring FET for Polarization-Independent Large-Scale/Real-Time THz Imaging |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2019-06-09 |
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