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신세운

Shin, Se-Un
PICTUS Lab.
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dc.citation.conferencePlace JA -
dc.citation.endPage C311 -
dc.citation.startPage C310 -
dc.citation.title IEEE Symposium on VLSI Circuits -
dc.contributor.author Kang, Taewook -
dc.contributor.author Lee, Inhee -
dc.contributor.author Oh, Sechang -
dc.contributor.author Jang, Taekwang -
dc.contributor.author Kim, Yejoong -
dc.contributor.author Ahn, Hyochan -
dc.contributor.author Kim, Gyouho -
dc.contributor.author Shin, Se-Un -
dc.contributor.author Jeong, Seokhyeon -
dc.contributor.author Sylvester, Dennis -
dc.contributor.author Blaauw, David -
dc.date.accessioned 2024-02-01T00:09:01Z -
dc.date.available 2024-02-01T00:09:01Z -
dc.date.created 2021-02-10 -
dc.date.issued 2019-06-13 -
dc.description.abstract This paper presents a 1.7 × 4.1 × 2 mm3 pH sensor that is a fully integrated, stand-alone and implantable system. Instead of a bulky cm size Ag/AgCl electrode, we use a mm-size integrated platinum electrode, and differential sensing using ISFET and REFET pair to compensate for unstable fluid potential. We also propose a drift compensation technique in which the leakage from the source and drain through the gate oxide is canceled, reducing drift > 100 × . © 2019 JSAP. -
dc.identifier.bibliographicCitation IEEE Symposium on VLSI Circuits, pp.C310 - C311 -
dc.identifier.doi 10.23919/VLSIC.2019.8778184 -
dc.identifier.issn 0000-0000 -
dc.identifier.scopusid 2-s2.0-85073905229 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/79675 -
dc.identifier.url https://ieeexplore.ieee.org/document/8778184 -
dc.language 영어 -
dc.publisher Institute of Electrical and Electronics Engineers Inc. -
dc.title A 1.74.12 mm3 Fully Integrated pH Sensor for Implantable Applications using Differential Sensing and Drift-Compensation -
dc.type Conference Paper -
dc.date.conferenceDate 2019-06-09 -

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